Inventor · disambiguated record

Chung-Liang Cheng

Also filed as: CHENG CHUNG L · CHENG CHUNG-LIANG

161 granted patents·95 pending applications·269 citations·filing 2003–2025

99Inventor score

Technology areasH10P H10W H10D H10F H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD248 TAIWAN SEMICONDUCTOR MFG6 TAIWAN SEMICONDUCTOR COMPANY LTD1 TAIWAN SEMICONDUCTOR MFG COMPANY INC1

Top patents by PatentIndex Score

256 records

0199US11088034B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·7 cites·20 claims
0298US11469139B2Bottom-up formation of contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·5 cites·20 claims
0398US11380772B2Gate structure and patterning method for multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·6 cites·20 claims
0498US10964792B1Dual metal capped via contact structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·20 cites·20 claims
0598US10720431B1Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 21, 2020·29 cites·20 claims
0698US10170322B1Atomic layer deposition based process for contact barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·49 cites·20 claims
0797US11295989B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
0896US11581416B1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
0995US11978674B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·2 cites·18 claims
1095US11978751B1Pixel sensors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 7, 2024·2 cites·20 claims
1195US11610822B2Structures for tuning threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·3 cites·20 claims
1295US10818768B1Method for forming metal cap layers to improve performance of semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·8 cites·20 claims
1395US10770563B2Gate structure and patterning method for multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·7 cites·20 claims
1494US11728171B2Semiconductor device with metal gate fill structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
1594US11729967B2Capacitor, memory device, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
1694US11699736B2Gate structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·2 cites·20 claims
1794US11437477B1Fluorine-free interface for semiconductor device performance gainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·3 cites·20 claims
1893US11894461B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
1993US11776900B2Semiconductor device with contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
2093US10522344B2Integrated circuits with doped gate dielectricsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·6 cites·20 claims
2193US9548372B2Semiconductor device with tunable work functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 17, 2017·9 cites·20 claims
2292US11756934B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
2392US11699735B2Gate structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·2 cites·20 claims
2492US11183574B2Work function layers for transistor gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·5 cites·20 claims
2592US9362385B2Method for tuning threshold voltage of semiconductor device with metal gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 7, 2016·14 cites·20 claims
2691US12131955B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·1 cites·20 claims
2791US11049937B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·4 cites·19 claims
2891US10930495B2Integrated circuits with doped gate dielectricsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·4 cites·20 claims
2991US9425109B2Planarization method, method for polishing wafer, and CMP systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·8 cites·20 claims
3090US11901242B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
3190US10790196B2Threshold voltage tuning for fin-based integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 29, 2020·4 cites·20 claims
3289US10651292B2Dual metal via for contact resistance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
3389US2025366015A1Metal gate structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3489US2025324729A1Threshold Voltage Tuning for Fin-Based Integrated Circuit DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3588US11626493B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·20 claims
3688US11374090B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
3788US11177259B2Multi-threshold gate structure with doped gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·4 cites·20 claims
3888US11038029B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
3987US11925033B2Embedded backside memory on a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
4087US9685441B2Semiconductor device with tunable work functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·4 cites·20 claims
4187US2025366075A1Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4287US2025318209A1Dual metal via for contact resistance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4387US2025364403A1Field effect transistor with source/drain via and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4487US2025359073A1Phase change random access memory (pcram) device with increased packing density and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4587US2025324730A1Gate Oxide Structures in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG COMPANY INC·Filed 2025·Application pending·0 cites
4686US12328930B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
4786US11610904B2Semiconductor structure and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·1 cites·20 claims
4886US11532702B2Source/drain isolation structures for leakage preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·1 cites·20 claims
4986US9227294B2Apparatus and method for chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·5 cites·20 claims
5086US9064857B2N metal for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 23, 2015·6 cites·20 claims

Showing the top 50 of 256 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →