Inventor · disambiguated record
Chun-Hu Cheng
Also filed as: CHENG CHUN-HU
10 granted patents·5 pending applications·71 citations·filing 2010–2019
87Inventor score
Files withUNIV NAT TAIWAN NORMAL6TAIWAN SEMICONDUCTOR MFG2UNIV NAT CHIAO TUNG2YAO LIANG-GI2CHIN ALBERT1
Top patents by PatentIndex Score
15 records- 0196US9837435B1Three-dimensional non-volatile memory structure and manufacturing method thereofPHISON ELECTRONICS CORP·Filed 2017·Granted Dec 5, 2017·31 cites·20 claims
- 0289US9871112B1Semiconductor device and method of manufacturing the sameUNIV NAT TAIWAN NORMAL·Filed 2017·Granted Jan 16, 2018·7 cites·6 claims
- 0389US8791444B2Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the sameCHIN ALBERT·Filed 2011·Granted Jul 29, 2014·14 cites·5 claims
- 0487US10872966B1Storage memory deviceUNIV NAT TAIWAN NORMAL·Filed 2019·Granted Dec 22, 2020·4 cites·15 claims
- 0587US8268683B2Method for reducing interfacial layer thickness for high-K and metal gate stackYAO LIANG-GI·Filed 2010·Granted Sep 18, 2012·6 cites·20 claims
- 0686US8470659B2Method for reducing interfacial layer thickness for high-k and metal gate stackYAO LIANG-GI·Filed 2012·Granted Jun 25, 2013·5 cites·20 claims
- 0785US9006056B2Method for reducing interfacial layer thickness for high-k and metal gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·4 cites·20 claims
- 0856US9245970B2Semiconductor structure having interfacial layer and high-k dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 26, 2016·0 cites·20 claims
- 0954US2021005728A1Storage memory deviceUNIV NAT TAIWAN NORMAL·Filed 2019·Application pending·0 cites
- 1037US9812629B2Thermoelectric conversion structure and its use in heat dissipation deviceIND TECH RES INST·Filed 2013·Granted Nov 7, 2017·0 cites·18 claims
- 1137US2017271460A1Semiconductor device for ultra-high voltage operation and method for forming the sameUNIV NAT CHIAO TUNG·Filed 2016·Application pending·0 cites
- 1236US2018166448A1Strained-gate Engineered Dynamic Random Access Memory Including Ferroelectric Negative Capacitance Dielectrics And Manufacturing Method ThereofUNIV NAT TAIWAN NORMAL·Filed 2017·Application pending·0 cites
- 1335US10515980B2Flash memory structure and method of manufacturing the sameUNIV NAT TAIWAN NORMAL·Filed 2017·Granted Dec 24, 2019·0 cites·13 claims
- 1434US2016308070A1Semiconductor deviceUNIV NAT CHIAO TUNG·Filed 2016·Application pending·0 cites
- 1531US2015263176A1Thin film transistor and manufacturing method for the sameUNIV NAT TAIWAN NORMAL·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →