Inventor · disambiguated record
Chih-Chang Cheng
Also filed as: CHENG CHIH-CHANG
75 granted patents·10 pending applications·149 citations·filing 2010–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD48TAIWAN SEMICONDUCTOR MFG20CHENG CHIH-CHANG7SU RU-YI7HUO KER HSIAO2
Top patents by PatentIndex Score
85 records- 0199US11088085B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·6 cites·20 claims
- 0292US9373619B2High voltage resistor with high voltage junction terminationSU RU-YI·Filed 2011·Granted Jun 21, 2016·11 cites·20 claims
- 0392US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 0491US11107899B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·2 cites·20 claims
- 0591US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 0691US8664718B2Power MOSFETs and methods for forming the sameCHENG CHIH-CHANG·Filed 2012·Granted Mar 4, 2014·12 cites·20 claims
- 0791US2025357364A1A novel layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0888US10658482B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·3 cites·20 claims
- 0988US9000517B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·6 cites·20 claims
- 1088US8629513B2HV interconnection solution using floating conductorsSU RU-YI·Filed 2011·Granted Jan 14, 2014·10 cites·14 claims
- 1188US8598679B2Stacked and tunable power fuseCHENG CHIH-CHANG·Filed 2010·Granted Dec 3, 2013·8 cites·20 claims
- 1288US8445955B2Quasi-vertical structure for high voltage MOS deviceCHENG CHIH-CHANG·Filed 2010·Granted May 21, 2013·9 cites·14 claims
- 1387US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 1487US8587073B2High voltage resistorCHENG CHIH-CHANG·Filed 2010·Granted Nov 19, 2013·8 cites·20 claims
- 1586US8575694B2Insulated gate bipolar transistor structure having low substrate leakageHUO KER HSIAO·Filed 2012·Granted Nov 5, 2013·6 cites·19 claims
- 1685US9917212B1JFET structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·4 cites·20 claims
- 1785US9466715B2MOS transistor having a gate dielectric with multiple thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 11, 2016·6 cites·8 claims
- 1885US8969913B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 3, 2015·5 cites·21 claims
- 1984US12469798B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 2083US8803232B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesHUO KER HSIAO·Filed 2011·Granted Aug 12, 2014·6 cites·18 claims
- 2183US2024371966A1Mehtod of making triple well isolated diode and triple well isolated diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2281US8680616B2High side gate driver deviceSU RU-YI·Filed 2010·Granted Mar 25, 2014·5 cites·7 claims
- 2379US10714432B1Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·1 cites·20 claims
- 2479US2025343152A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2578US2024014260A1High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2678US2023378296A1Semiconductor device having multiple wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2776US11923429B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 2876US11817396B2Layout to reduce noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 2976US9257533B2Method of making an insulated gate bipolar transistor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 3076US9013004B2Quasi-vertical structure having a sidewall implantation for high voltage MOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 21, 2015·2 cites·20 claims
- 3174US2024379789A1Transistor device with recessed gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3273US11769812B2Semiconductor device having multiple wells and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 3373US9035379B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 19, 2015·2 cites·20 claims
- 3471US11011610B2Plate design to decrease noise in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 3571US9583610B2Transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·1 cites·20 claims
- 3670US12176407B2Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer withinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 3770US11676997B2High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 3870US9356139B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·1 cites·20 claims
- 3970US8704312B2High voltage devices and methods of forming the high voltage devicesCHENG CHIH-CHANG·Filed 2010·Granted Apr 22, 2014·3 cites·20 claims
- 4069US10205024B2Semiconductor structure having field plate and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 12, 2019·1 cites·20 claims
- 4169US9159827B2Transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 13, 2015·1 cites·20 claims
- 4268US9520467B1Field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·1 cites·20 claims
- 4368US2023026676A1Semiconductor device structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4467US11069805B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 4564US12074208B2Method of making triple well isolated diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 27, 2024·0 cites·20 claims
- 4661US9472665B2MOS transistor and method for manufacturing MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 18, 2016·1 cites·17 claims
- 4760US11158739B2Semiconductor structure having field plate and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
- 4860US10957772B2Semiconductor device having multiple wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·0 cites·20 claims
- 4959US10038090B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·0 cites·20 claims
- 5059US9385178B2High voltage resistor with PIN diode isolationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·0 cites·20 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →