Inventor · disambiguated record
Chun-Fu Cheng
Also filed as: CHENG CHUN-FU
37 granted patents·17 pending applications·52 citations·filing 2010–2025
96Inventor score
Top patents by PatentIndex Score
54 records- 0197US11532627B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·5 cites·20 claims
- 0295US11569348B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·4 cites·20 claims
- 0394US11152338B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·3 cites·20 claims
- 0492US11929409B2Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·1 cites·20 claims
- 0592US10672742B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 2, 2020·9 cites·20 claims
- 0689US11264270B2Air-replaced spacer for self-aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 0789US9362404B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·18 claims
- 0885US11489063B2Method of manufacturing a source/drain feature in a multi-gate semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 0985US11476342B1Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·1 cites·20 claims
- 1085US11469332B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 11, 2022·2 cites·20 claims
- 1185US9455346B2Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 27, 2016·5 cites·20 claims
- 1282US11037925B2Structure and method of integrated circuit having decouple capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 1381US12211790B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1481US12199170B2Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1581US11309240B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·1 cites·20 claims
- 1681US2025301711A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1781US2024389338A1Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1880US12009408B2Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 1978US12310029B2Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 2078US9659776B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·2 cites·20 claims
- 2178US2024339355A1Air-Replaced Spacer for Self-Aligned Contact SchemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2277US8859380B2Integrated circuits and manufacturing methods thereofWU ZHIQIANG·Filed 2010·Granted Oct 14, 2014·4 cites·20 claims
- 2377US2025351563A1Complementary field effect transistor with hybrid nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2477US2025359117A1Semiconductor device structure with finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2576US12250822B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 2676US2024186388A1Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2776US2025151305A1Multi-gate devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2875US12349418B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2975US12040222B2Air-replaced spacer for self-aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 3075US12034044B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·19 claims
- 3175US11837538B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 3275US2025366104A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3374US2025299959A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3474US2024379803A1Field effect transistor with merged epitaxy backside cut and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3572US2024113173A1Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3672US2025151283A1Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3771US12334350B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3870US11716857B2Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 3970US10276717B2Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·1 cites·20 claims
- 4068US10516047B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·1 cites·20 claims
- 4167US11756959B2Structure and method of integrated circuit having decouple capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 4265US12501660B2Field effect transistor with merged epitaxy backside cut and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 16, 2025·0 cites·20 claims
- 4363US11855143B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4462US12432954B2Semiconductor device structure with fin and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 4562US10861972B2Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 4662US2024072115A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4759US9306033B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 5, 2016·0 cites·20 claims
- 4854US2024429279A1Biaxial oxide direction complementary field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4953US9502253B2Method of manufacturing an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·20 claims
- 5053US8912608B2Semiconductor device and fabrication method thereofHUANG YU-LIEN·Filed 2012·Granted Dec 16, 2014·0 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →