Inventor · disambiguated record
Chun-Fai Cheng
Also filed as: CHENG CHUN-FAI
49 granted patents·9 pending applications·250 citations·filing 2000–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD27CHENG CHUN-FAI9TAIWAN SEMICONDUCTOR MFG8TSAI MING-HUAN4IFIRE TECHNOLOGY INC3
Top patents by PatentIndex Score
58 records- 0198US11107736B1Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·6 cites·20 claims
- 0297US8236659B2Source and drain feature profile for improving device performance and method of manufacturing sameTSAI MING-HUAN·Filed 2010·Granted Aug 7, 2012·41 cites·7 claims
- 0395US12166075B2Method and structure for gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0495US8502316B2Self-aligned two-step STI formation through dummy poly removalFUNG KA-HING·Filed 2010·Granted Aug 6, 2013·23 cites·20 claims
- 0594US10872897B2Cutting metal gates in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 22, 2020·3 cites·16 claims
- 0694US8216906B2Method of manufacturing integrated circuit device with well controlled surface proximityTSAI MING-HUAN·Filed 2010·Granted Jul 10, 2012·21 cites·17 claims
- 0793US8642417B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 4, 2014·14 cites·20 claims
- 0892US8614132B2Integrated circuit device with well controlled surface proximity and method of manufacturing sameTSAI MING-HUAN·Filed 2011·Granted Dec 24, 2013·10 cites·19 claims
- 0992US8445940B2Source and drain feature profile for improving device performanceTSAI MING-HUAN·Filed 2012·Granted May 21, 2013·12 cites·20 claims
- 1089US11854906B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 1189US8900960B2Integrated circuit device with well controlled surface proximity and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·6 cites·21 claims
- 1288US11145536B2Gate dielectric preserving gate cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·3 cites·20 claims
- 1387US10699940B2Gate dielectric preserving gate cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·3 cites·20 claims
- 1487US8569139B2Method of manufacturing strained source/drain structuresNIEH CHUN-FENG·Filed 2010·Granted Oct 29, 2013·8 cites·20 claims
- 1586US8580641B2Techniques providing high-k dielectric metal gate CMOSLU WEI-YUAN·Filed 2011·Granted Nov 12, 2013·7 cites·12 claims
- 1686US8558289B2Transistors having a composite strain structure, integrated circuits, and fabrication methods thereofCHENG CHUN-FAI·Filed 2010·Granted Oct 15, 2013·8 cites·21 claims
- 1785US12218013B2Gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1885US8709897B2High performance strained source-drain structure and method of fabricating the sameSUNG HSUEH-CHANG·Filed 2010·Granted Apr 29, 2014·9 cites·20 claims
- 1985US8680625B2Facet-free semiconductor deviceFAN WEI-HAN·Filed 2010·Granted Mar 25, 2014·12 cites·20 claims
- 2083US10424588B2Cutting metal gates in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 24, 2019·3 cites·19 claims
- 2181US8482079B2Semiconductor device and method of manufacturing the sameCHENG CHUN-FAI·Filed 2011·Granted Jul 9, 2013·5 cites·20 claims
- 2281US2025359255A1Epitaxial features in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2381US2025366043A1Multi-Gate Devices With Reduced Contact Resistance And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2478US9698054B2Strained structure of a p-type field effect transistorCHENG CHUN-FAI·Filed 2011·Granted Jul 4, 2017·3 cites·20 claims
- 2578US6448950B1Energy efficient resonant switching electroluminescent display driverIFIRE TECHNOLOGY INC·Filed 2000·Granted Sep 10, 2002·19 cites·28 claims
- 2677US9847225B2Semiconductor device and method of manufacturing the sameCHENG CHUN-FAI·Filed 2011·Granted Dec 19, 2017·4 cites·21 claims
- 2777US2025176250A1Gate Structures For Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2876US2025311355A1Semiconductor Devices And Methods Of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2976US2025107173A1Method and structure for gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3075US2025120139A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3172US9099346B2Techniques providing high-k dielectric metal gate CMOSTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 4, 2015·2 cites·20 claims
- 3272US9048253B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·2 cites·21 claims
- 3371US8535998B2Method for fabricating a gate structureHING FUNG KA·Filed 2010·Granted Sep 17, 2013·4 cites·19 claims
- 3471US8368147B2Strained semiconductor device with recessed channelTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·3 cites·12 claims
- 3569US11329159B2Strained structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 3669US8952459B2Gate structure having lightly doped regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 10, 2015·2 cites·20 claims
- 3769US8928094B2Strained asymmetric source/drainCHENG CHUN-FAI·Filed 2010·Granted Jan 6, 2015·2 cites·20 claims
- 3868US11152250B2Gate dielectric preserving gate cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 3968US8872228B2Strained-channel semiconductor device fabricationCHENG CHUN-FAI·Filed 2012·Granted Oct 28, 2014·3 cites·19 claims
- 4067US2023378320A1Epitaxial features in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4166US12389653B2Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 4265US12176390B2Semiconductor device structure and method for forming the semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 4365US6819308B2Energy efficient grey scale driver for electroluminescent displaysIFIRE TECHNOLOGY INC·Filed 2001·Granted Nov 16, 2004·8 cites·32 claims
- 4462US10658372B2Cutting metal gates in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·0 cites·20 claims
- 4562US2025380458A1Different Sacrificial Layers for Different Type DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4660US9799750B2Semiconductor device and fabrication method thereofCHENG CHUN-FAI·Filed 2012·Granted Oct 24, 2017·1 cites·21 claims
- 4759US9349831B2Integrated circuit device with well controlled surface proximity and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·0 cites·20 claims
- 4859US9311845B2Method and apparatus for gray-scale gamma correction for electroluminescent displaysCHENG CHUN-FAI·Filed 2013·Granted Apr 12, 2016·0 cites·11 claims
- 4958US11876013B2Gate dielectric preserving gate cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 5058US10727340B2Strained structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →