Inventor · disambiguated record

Chih-Chien Chi

Also filed as: CHI CHIH-CHIEN

55 granted patents·19 pending applications·146 citations·filing 2013–2025

98Inventor score

Technology areasH10W H10P C23C H01J H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD69 TAIWAN SEMICONDUCTOR MFG5

Top patents by PatentIndex Score

74 records

0198US11682624B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·4 cites·20 claims
0297US11374127B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·4 cites·20 claims
0397US9754822B1Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·30 cites·20 claims
0496US11380542B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
0595US8940635B1Structure and method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·21 cites·20 claims
0694US10770288B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·9 cites·20 claims
0793US9496169B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·6 cites·20 claims
0893US9343294B2Interconnect structure having air gap and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 17, 2016·13 cites·20 claims
0992US11742290B2Interconnect structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
1091US2025070027A1Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1190US10727350B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·4 cites·20 claims
1289US9754882B2Interconnect structure having air gap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·5 cites·20 claims
1388US10790142B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
1488US10269627B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
1588US10199500B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 5, 2019·4 cites·20 claims
1687US10840134B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
1787US2024395939A1Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1886US12159838B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
1985US12354958B2Semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·1 cites·21 claims
2085US9917058B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·2 cites·20 claims
2185US9576892B2Semiconductor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 21, 2017·6 cites·20 claims
2285US9567668B2Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·3 cites·20 claims
2383US12166128B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
2483US11894437B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·1 cites·20 claims
2583US9640428B2Self-aligned repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 2, 2017·3 cites·20 claims
2682US10103099B2Semiconductor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·3 cites·20 claims
2781US9514928B2Selective repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·4 cites·19 claims
2880US12237261B2Semiconductor device having a contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
2979US11777035B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
3078US12165975B2Method of forming interconnect structure having a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
3178US11830742B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
3277US11996361B2Method of making a contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
3377US10727118B2Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
3477US9887073B2Physical vapor deposition system and physical vapor depositing method using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·2 cites·20 claims
3577US2025357348A1Barrier free tungsten liner in contact plugs and the method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3677US2025183161A1Method of making semiconductor device having a contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3777US2024413087A1Interconnect Structure and Method of Forming ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3876US11851749B2Semiconductor device, method and machine of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
3976US2024093357A1Semiconductor Device, Method and Machine of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4075US2024379541A1Nitrogen Plasma Treatment For Improving Interface Between Etch Stop Layer And Copper InterconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4174US9184134B2Method of manufacturing a semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 10, 2015·3 cites·20 claims
4274US2024387382A1Low-resistance copper interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4374US2024379556A1Forming Liners to Facilitate The Formation of Copper-Containing Vias in Advanced Technology NodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4474US2024387259A1Conductive structures with barriers and liners of varying thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4573US2024379430A1Interconnect structure including graphite and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4672US12159830B2Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
4772US11652044B2Contact structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
4872US2024387381A1Semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4971US11328952B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
5070US12315764B2Conductive structures with barriers and liners of varying thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims

Showing the top 50 of 74 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →