Inventor · disambiguated record
Chao-Hsin Chien
Also filed as: CHIEN CHAO-HSIN
12 granted patents·7 pending applications·20 citations·filing 2004–2025
86Inventor score
Top patents by PatentIndex Score
19 records- 0191US9496259B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·8 cites·14 claims
- 0280US10971629B2Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 0375US10453688B2Method of manufacturing a semiconductor device including a ternary alloy layer formed by a microwafe anneal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·3 cites·20 claims
- 0475US9837538B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·2 cites·20 claims
- 0570US12027628B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 0668US9859276B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 2, 2018·1 cites·20 claims
- 0766US2025331241A1Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0864US9502502B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·1 cites·20 claims
- 0961US11670720B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1060US2025374816A1Carbon nanotube device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1159US9590105B2Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·1 cites·20 claims
- 1257US2024422998A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1356US2023327007A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1455US12324183B2Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 1555US10269966B2Semiconductor device including a fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1655US2024347340A1Epitaxial structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1753US12376346B2Method for fabricating integrated circuit device with two gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1835US2007205444A1Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrateLUO GUANGLI·Filed 2006·Application pending·0 cites
- 1934US2006125027A1Nonvolatile flash memory with HfO2 nanocrystalNAT APPLIED RES LABORATORIES·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →