Inventor · disambiguated record
Chih-Yun Chin
Also filed as: CHIN CHIH-YUN
12 granted patents·5 pending applications·12 citations·filing 2015–2025
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17
Top patents by PatentIndex Score
17 records- 0194US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 0286US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 0381US12336210B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 0481US2024096958A1Supportive layer in source/drains of finfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0581US2025287630A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0679US11855142B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 0777US11735668B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 0876US2025089295A1Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0972US11575026B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 1072US11482620B2Interfacial layer between Fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 1172US11476331B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 1263US10164097B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·1 cites·20 claims
- 1362US10944005B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 1462US10854715B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 1555US2024021618A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1646US11264237B2Method of epitaxy and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·20 claims
- 1745US2021265350A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →