Inventor · disambiguated record
Chi-Hing Choi
Also filed as: CHOI CHI-HING
6 granted patents·14 pending applications·75 citations·filing 1998–2025
80Inventor score
Files withINTEL CORP19
Top patents by PatentIndex Score
20 records- 0181US6507081B2In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene applicationINTEL CORP·Filed 2001·Granted Jan 14, 2003·25 cites·21 claims
- 0276US6255233B1In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene applicationINTEL CORP·Filed 1998·Granted Jul 3, 2001·45 cites·10 claims
- 0369US2025324697A1Mitigating proximity effects of deep trench viasINTEL CORP·Filed 2025·Application pending·0 cites
- 0461US2025098249A1Mitigating proximity effects of deep trench viasINTEL CORP·Filed 2023·Application pending·0 cites
- 0557US12426342B2Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stabilityINTEL CORP·Filed 2021·Granted Sep 23, 2025·0 cites·8 claims
- 0656US12439669B2Co-deposition of titanium and silicon for improved silicon germanium source and drain contactsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·20 claims
- 0756US6642141B2In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene applicationINTEL CORP·Filed 2001·Granted Nov 4, 2003·5 cites·15 claims
- 0856US2025311331A1Integrated circuit structures having epitaxial nubs for uniform grid metal gate and trench contact cutINTEL CORP·Filed 2024·Application pending·0 cites
- 0955US2025194223A1Uniaxial dual strain in ribbonized channelINTEL CORP·Filed 2023·Application pending·0 cites
- 1052US2024105508A1Integrated circuit devices with contacts using nitridized molybdenumINTEL CORP·Filed 2022·Application pending·0 cites
- 1152US2024006506A1Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 1251US2024006488A1Capping source and drain regions of transistors to prevent diffusion of dopants during fabricationINTEL CORP·Filed 2022·Application pending·0 cites
- 1350US2024006494A1Source and drain refractory metal capINTEL CORP·Filed 2022·Application pending·0 cites
- 1450US2024006533A1Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 1549US2025006733A1Integrated circuit structures with differential epitaxial source or drain dentINTEL CORP·Filed 2023·Application pending·0 cites
- 1648US2023317789A1Source or drain structures with selective silicide contacts thereonINTEL CORP·Filed 2022·Application pending·0 cites
- 1748US2025006592A1Low-resistance via structuresINTEL CORP·Filed 2023·Application pending·0 cites
- 1846US2023101725A1Silicon rich capping layer pre-amorphized with germanium and boron implants for thermal stability and low pmos contact resistivityINTEL CORP·Filed 2021·Application pending·0 cites
- 1931US2003209805A1Flourine doped SiO2 film and method of fabricationFiled 2003·Application pending·0 cites
- 2027US6746727B1Metal to ILD adhesion improvement by reactive sputteringINTEL CORP·Filed 1998·Granted Jun 8, 2004·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →