Inventor · disambiguated record
Chen-Han Chou
Also filed as: CHOU CHEN HAN
10 granted patents·5 pending applications·14 citations·filing 2013–2025
83Inventor score
Top patents by PatentIndex Score
15 records- 0191US9496259B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·8 cites·14 claims
- 0284US11784119B2Three dimensional integrated circuit and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·1 cites·20 claims
- 0377US12211789B2Three dimensional integrated circuit and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 0475US9837538B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·2 cites·20 claims
- 0574US2024395698A1Three dimensional integrated circuit and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0669US2025267904A1Transistors having two-dimensional semiconductor channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0768US9859276B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 2, 2018·1 cites·20 claims
- 0865US12310073B2Transistors having two-dimensional semiconductor channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 0965US9460928B2Method for manufacturing semiconductor devicesMACRONIX INT CO LTD·Filed 2015·Granted Oct 4, 2016·1 cites·10 claims
- 1064US9502502B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·1 cites·20 claims
- 1160US2025374816A1Carbon nanotube device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1257US2025098187A1Semiconductor memory cell structure including a hydrogen absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1355US10269966B2Semiconductor device including a fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1452US12154828B2Semiconductor device having a 2-D material layer including a channel region and source/drain regions and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 1540US2014264528A1Non-volatile memory structureMACRONIX INT CO LTD·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →