Inventor · disambiguated record
Chien-Chih Chou
Also filed as: CHOU CHIEN C · CHOU CHIEN-CHIH
78 granted patents·23 pending applications·324 citations·filing 1996–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD84TAIWAN SEMICONDUCTOR MFG10SU RU-YI2APPLE COMPUTER1FU SHIH-CHI1
Top patents by PatentIndex Score
101 records- 0198US11410995B1Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·6 cites·20 claims
- 0298US10050033B1High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·18 cites·20 claims
- 0397US11677022B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0496US12021140B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0595US11823959B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 0695US10340357B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·9 cites·20 claims
- 0794US12191365B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·1 cites·20 claims
- 0894US9691895B2Lateral MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·9 cites·14 claims
- 0993US10868106B2Semiconductor structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 1092US8159029B2High voltage device having reduced on-state resistanceSU RU-YI·Filed 2008·Granted Apr 17, 2012·21 cites·20 claims
- 1191US5978893AMethod and system for memory managementAPPLE COMPUTER·Filed 1996·Granted Nov 2, 1999·113 cites·23 claims
- 1290US12211926B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·1 cites·20 claims
- 1390US10516029B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·4 cites·20 claims
- 1488US7714392B2Method for forming an improved low power SRAM contactTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 11, 2010·13 cites·4 claims
- 1588US2025120153A1Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1687US12356658B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 1787US9318366B2Method of forming integrated circuit having modified isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·20 claims
- 1887US2025311292A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1986US10748899B2Epitaxial source and drain structures for high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 18, 2020·4 cites·20 claims
- 2086US8847319B2Dummy structure for multiple gate dielectric interface and methodsLIU HUEI-RU·Filed 2012·Granted Sep 30, 2014·11 cites·19 claims
- 2186US7232762B2Method for forming an improved low power SRAM contactTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 19, 2007·34 cites·27 claims
- 2284US12261218B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 2384US11302691B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 2483US12363998B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2583US10535752B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·2 cites·20 claims
- 2683US2024379788A1Thicker corner of a gate dielectric structure around a recessed gate electrode for an mv deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2783US2025311405A1Recessed gate for an mv deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2882US12255207B2Boundary design for high-voltage integration on HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 2982US11133226B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 28, 2021·2 cites·20 claims
- 3081US11527531B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 13, 2022·2 cites·20 claims
- 3181US10263064B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 16, 2019·3 cites·20 claims
- 3280US12439679B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 3380US7816744B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 19, 2010·7 cites·18 claims
- 3479US10790279B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 3578US10553583B2Boundary region for high-k-metal-gate(HKMG) integration technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·2 cites·18 claims
- 3678US2024371865A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3777US11799007B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 3877US11276684B2Recessed composite capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·20 claims
- 3977US10950708B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·1 cites·20 claims
- 4077US10804220B2Dishing prevention columns for bipolar junction transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·1 cites·20 claims
- 4177US10510750B2High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 4277US2025221032A1Boundary design for high-voltage integration on hkmg technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4377US2025318261A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4477US2025331221A1High-voltage semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US12100706B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 4676US2025203927A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4776US2025311357A1Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4875US11855091B2Boundary design for high-voltage integration on HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4975US10269703B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 5074US11948938B2Recessed gate for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
Showing the top 50 of 101 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →