Inventor · disambiguated record
Chia-Hung Chu
Also filed as: CHU CHIA-HUNG
63 granted patents·32 pending applications·91 citations·filing 2009–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD77LEE HOU-TE6LITE ON OPTO TECHNOLOGY CHANGZHOU CO LTD4HEWLETT PACKARD DEVELOPMENT CO2GUDENG EQUIPMENT CO LTD1
Top patents by PatentIndex Score
95 records- 0198US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
- 0297US11462471B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·6 cites·20 claims
- 0396US11476365B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·4 cites·20 claims
- 0495US11563083B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
- 0593US11158539B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·6 cites·19 claims
- 0691US12040372B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 0791US11837544B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 0891US2025366038A1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0989US11227794B2Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 1089US11011413B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·6 cites·20 claims
- 1187US12341013B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 1286US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
- 1386US2025349614A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1486US2025308901A1Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1585US12334435B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1683US11894437B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·1 cites·20 claims
- 1783US11489057B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 1, 2022·1 cites·20 claims
- 1882US11929327B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 12, 2024·1 cites·20 claims
- 1982US11521929B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·1 cites·20 claims
- 2081US12080766B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2181US11594609B2Liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 2281US2025279353A1Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2380US12046634B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2479US11217524B1Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 2579US2024379425A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2679US2024363704A1Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2778US2024243009A1Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2878US2025351424A1Void-free conductive contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2977US12009294B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 3077US2024332393A1Contact Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3177US2025359278A1Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3277US2024355742A1Hybrid Conductive StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3376US12400962B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 3476US12057397B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 3576US12051592B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 3676US2025323163A1Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3775US11972974B2Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 3875US2024355741A1Capping Layer For Liner-Free Conductive StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3974US12068252B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4074US2024387675A1Epitaxial structure for source/drain contactTAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY LTD·Filed 2024·Application pending·0 cites
- 4173US2024371952A1Backside contact structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4273US2025285962A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4372US2025063758A1Conductive structures and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4472US2024274687A1Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4571US12300540B2Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 4670US12477778B2Epitaxial structure for source/drain contact for semiconductor structure having fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 18, 2025·0 cites·20 claims
- 4770US2023386912A1Contact Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4869US12362234B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 15, 2025·0 cites·20 claims
- 4969US11581259B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·20 claims
- 5069US2023378305A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →