Inventor · disambiguated record

Cheng-Chi Chuang

Also filed as: CHUANG CHENG-CHI

216 granted patents·99 pending applications·371 citations·filing 2012–2025

99Inventor score

Technology areasH10W H10P H10D B82Y H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD309 TAIWAN SEMICONDUCTOR MFG2 CHUANG CHENG-CHI1 TAIWAN CEMICONDUCTOR MFG COMPANY LTD1 TIAWAN SEMICONDUCTOR MFG CO LTD1

Top patents by PatentIndex Score

315 records

0199US11581224B2Method for forming long channel back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·8 cites·20 claims
0299US11532713B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·6 cites·20 claims
0399US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
0499US11443987B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·6 cites·20 claims
0599US11404548B2Capacitance reduction for backside power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·7 cites·20 claims
0699US11374093B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·6 cites·20 claims
0799US11355601B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·14 cites·20 claims
0899US11349004B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·6 cites·20 claims
0999US11233005B1Method for manufacturing an anchor-shaped backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·7 cites·20 claims
1098US11830769B2Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·4 cites·20 claims
1198US11621197B2Semiconductor device with gate cut feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·5 cites·20 claims
1298US11482595B1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·4 cites·20 claims
1398US11456209B2Spacers for semiconductor devices including a backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
1498US11342413B2Selective liner on backside via and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·5 cites·20 claims
1598US11342326B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
1698US11257758B2Backside connection structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·5 cites·20 claims
1798US11239325B2Semiconductor device having backside via and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
1898US11222892B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·16 cites·20 claims
1998US11201085B2Semiconductor device structure having air gap and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·6 cites·20 claims
2098US11158580B2Semiconductor devices with backside power distribution network and frontside through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·27 cites·20 claims
2198US11121138B1Low resistance pickup cells for SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·9 cites·20 claims
2297US12009394B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
2397US11915972B2Methods of forming spacers for semiconductor devices including backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
2497US11862561B2Semiconductor devices with backside routing and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 2, 2024·4 cites·20 claims
2597US11848372B2Method and structure for reducing source/drain contact resistance at wafer backsideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·3 cites·20 claims
2697US11682730B2Connector via structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·4 cites·20 claims
2797US11664280B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 30, 2023·2 cites·20 claims
2897US11551969B2Integrated circuit structure with backside interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
2997US11532744B2Gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·4 cites·20 claims
3097US11502201B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·4 cites·20 claims
3197US11152475B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·4 cites·20 claims
3296US12148795B2Increasing device density and reducing cross-talk spacer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·2 cites·20 claims
3396US12132092B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·2 cites·19 claims
3496US12080713B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·2 cites·20 claims
3596US12021123B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
3696US11984350B2Integrated circuit structure with backside interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
3796US11721623B2Backside connection structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·2 cites·20 claims
3896US11670691B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
3996US11387140B2Enlarging contact area and process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
4096US11316023B2Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
4195US12369365B2Semiconductor devices with backside power rail and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·1 cites·20 claims
4295US11842967B2Semiconductor devices with backside power distribution network and frontside through silicon viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
4395US11658220B2Drain side recess for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·3 cites·20 claims
4495US10937884B1Gate spacer with air gap for semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·10 cites·20 claims
4595US9390965B2Air-gap forming techniques for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 12, 2016·12 cites·20 claims
4694US11842962B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
4794US11777003B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
4894US11563001B2Air spacer and capping structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·4 cites·20 claims
4994US11532556B2Structure and method for transistors having backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
5093US11955515B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims

Showing the top 50 of 315 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →