Inventor · disambiguated record

Chi On Chui

Also filed as: CHUI CHI ON

417 granted patents·274 pending applications·531 citations·filing 2003–2025

99Inventor score

Technology areasH10P H10D H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD672 INTEL CORP5 UNIV CALIFORNIA5 UNIV LELAND STANFORD JUNIOR3 CHUI CHI ON2

Top patents by PatentIndex Score

691 records

0199US11437474B2Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·6 cites·20 claims
0299US11289603B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·20 claims
0399US11227956B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·11 cites·20 claims
0499US11217494B1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·9 cites·20 claims
0598US11916114B2Gate structures in transistors and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·4 cites·19 claims
0698US11765892B2Three-dimensional memory device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·3 cites·20 claims
0798US11637180B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·5 cites·20 claims
0898US11502081B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
0998US11437277B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·19 claims
1098US11417739B2Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 16, 2022·5 cites·20 claims
1198US11411079B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
1298US11302793B2Transistor gates and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·6 cites·20 claims
1398US11227931B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
1498US10062784B1Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·31 cites·20 claims
1597US11923414B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
1697US11791421B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·3 cites·20 claims
1797US11664441B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·4 cites·20 claims
1897US11581410B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
1997US11437240B2Transistor gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·3 cites·20 claims
2097US11437492B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
2197US11316034B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
2297US11309398B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·4 cites·20 claims
2397US11088154B1Ferroelectric device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·4 cites·20 claims
2497US11043570B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·4 cites·20 claims
2597US9768278B1Reduction of Fin loss in the formation of FinFETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·18 cites·20 claims
2696US12112942B2Deposition process for forming semiconductor device and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·2 cites·20 claims
2796US12027423B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
2896US12015066B2Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·3 cites·20 claims
2996US11967504B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·4 cites·20 claims
3096US11942523B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·2 cites·20 claims
3196US11935754B2Transistor gate structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
3296US11935937B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
3396US11923432B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·4 cites·20 claims
3496US11916132B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
3596US11916124B2Transistor gates and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·19 claims
3696US11856785B2Memory array and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
3796US11855128B2Metal insulator metal (MIM) structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
3896US11848370B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
3996US11710782B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·20 claims
4096US11670718B2Semiconductor device structure with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 6, 2023·2 cites·20 claims
4196US11563079B2Metal insulator metal (MIM) structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·4 cites·20 claims
4296US11469229B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·3 cites·20 claims
4396US7928426B2Forming a non-planar transistor having a quantum well channelINTEL CORP·Filed 2007·Granted Apr 19, 2011·23 cites·11 claims
4495US12166095B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·1 cites·20 claims
4595US12040365B1Incorporating nitrogen in dipole engineering for multi-threshold voltage applications in stacked device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·4 cites·20 claims
4695US11758736B2Ferroelectric random access memory devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
4795US11728173B2Masking layer with post treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·3 cites·20 claims
4895US11682675B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
4995US11532479B2Cut metal gate refill with voidTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·5 cites·20 claims
5095US11430698B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims

Showing the top 50 of 691 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →