Inventor · disambiguated record
Cheng-Ting Chung
Also filed as: CHUNG CHENG-TING
55 granted patents·36 pending applications·88 citations·filing 2014–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD91
Top patents by PatentIndex Score
91 records- 0198US11862701B2Stacked multi-gate structure and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·5 cites·20 claims
- 0298US11664374B2Backside interconnect structures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·7 cites·20 claims
- 0398US11251308B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·5 cites·20 claims
- 0498US11227917B1Nano-sheet-based devices with asymmetric source and drain configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·9 cites·20 claims
- 0595US12159869B2Backside interconnect structures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·2 cites·20 claims
- 0695US10879379B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·9 cites·20 claims
- 0794US11532556B2Structure and method for transistors having backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0894US9899387B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 20, 2018·11 cites·20 claims
- 0992US12119271B1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
- 1092US11652140B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
- 1191US11777033B2Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 1291US11145765B2Gate-all-around structure with self substrate isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 1391US9496259B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·8 cites·14 claims
- 1490US11757042B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·1 cites·20 claims
- 1589US11532720B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 1687US12477783B2Gate-all-around structure with self substrate isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1787US12094938B2Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·1 cites·20 claims
- 1887US11088255B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 1986US11699742B2Semiconductor device with varying numbers of channel layers and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 2086US10790280B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
- 2184US11088256B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
- 2284US2025359266A12D-Channel Transistor Structure with Asymmetric Substrate ContactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2383US12148837B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 2483US2025311412A1Low leakage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2583US2024372008A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2682US12324192B2Stacked multi-gate structure and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 2781US12211790B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2881US11309240B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·1 cites·20 claims
- 2981US11276637B2Barrier-free interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·20 claims
- 3081US2025318270A1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3181US2025359166A1Vertical self aligned gate all around transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3281US2025294811A1Stacked multi-gate structure and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3379US2025344468A1Middle dielectric isolation in complementary field-effect transistor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US2025344503A1NFET AND PFET WITH DIFFERENT FIN NUMBERS IN FinFET BASED CFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3578US12068370B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 3678US2024395856A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3778US2024332169A1Barrier-free interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3878US2024387657A12D-Channel Transistor Structure with Asymmetric Substrate ContactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3978US2025364477A1Semiconductor device and method having high-kappa bonding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4077US2024194787A1Transistors having nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4177US2025301716A12d channel with self-aligned source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4277US2025318179A1Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4376US2025324684A1Field effect transistor with air spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4476US2025331269A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US2025311410A1Dielectric walls for complementary field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4676US2025204049A1Backside Gate Contact, Backside Gate Etch Stop Layer, and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4775US12382655B2Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 4875US12342613B2Low leakage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 4975US11948989B2Gate-all-around device with protective dielectric layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 5075US11837538B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →