Inventor · disambiguated record
Chih-Piao Chuu
Also filed as: CHUU CHIH-PIAO
7 granted patents·5 pending applications·10 citations·filing 2019–2025
77Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD12
Top patents by PatentIndex Score
12 records- 0191US11923203B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·1 cites·20 claims
- 0291US11430666B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·5 cites·20 claims
- 0388US11037783B2Field effect transistor using transition metal dichalcogenide and a method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·4 cites·20 claims
- 0487US2025323060A1Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0584US12387944B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 0677US2024387642A1Transistor, manufacturing method of semiconductor device, and manufacturing method of hbnc layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0772US12230680B2Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 18, 2025·0 cites·20 claims
- 0869US11581185B2Field effect transistor using transition metal dichalcogenide and a method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·0 cites·20 claims
- 0969US2025159956A1Transistor, manufacturing method of semiconductor device, and manufacturing method of hbnc layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1062US2024102162A1Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1152US11289582B2Single-crystal hexagonal boron nitride layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
- 1251US2023411211A1Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →