Inventor · disambiguated record
Chiara Corvasce
Also filed as: CORVASCE CHIARA
20 granted patents·4 pending applications·68 citations·filing 1999–2022
92Inventor score
Files withABB SCHWEIZ AG6ABB TECHNOLOGY AG5ST MICROELECTRONICS SRL5HITACHI ENERGY LTD4ABB POWER GRIDS SWITZERLAND AG3
Top patents by PatentIndex Score
24 records- 0187US9825158B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2016·Granted Nov 21, 2017·6 cites·20 claims
- 0285US10109725B2Reverse-conducting semiconductor deviceABB SCHWEIZ AG·Filed 2017·Granted Oct 23, 2018·5 cites·20 claims
- 0378US9105680B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2014·Granted Aug 11, 2015·5 cites·20 claims
- 0478US6300654B1Structure of a stacked memory cell, in particular a ferroelectric cellST MICROELECTRONICS SRL·Filed 1999·Granted Oct 9, 2001·32 cites·16 claims
- 0577US9099520B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2014·Granted Aug 4, 2015·4 cites·19 claims
- 0672US9859360B2Edge termination for semiconductor devices and corresponding fabrication methodABB SCHWEIZ AG·Filed 2016·Granted Jan 2, 2018·2 cites·17 claims
- 0769US11189688B2Insulated gate power semiconductor device and method for manufacturing such deviceABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Nov 30, 2021·1 cites·13 claims
- 0856US6656801B2Method of fabricating a ferroelectric stacked memory cellST MICROELECTRONICS SRL·Filed 2001·Granted Dec 2, 2003·5 cites·19 claims
- 0949US6366488B1Ferroelectric non-volatile memory cell integrated in a semiconductor substrateST MICROELECTRONICS SRL·Filed 2000·Granted Apr 2, 2002·6 cites·13 claims
- 1048US12199144B2Power semiconductor device and manufacturiing methodHITACHI ENERGY LTD·Filed 2022·Granted Jan 14, 2025·0 cites·14 claims
- 1148US9153676B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2014·Granted Oct 6, 2015·0 cites·18 claims
- 1245US2024162295A1Gate-commuted thyristor cell with a base region having a varying thicknessHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 1344US2014370665A1Power semiconductor device and method for manufacturing such a power semiconductor deviceABB TECHNOLOGY AG·Filed 2014·Application pending·0 cites
- 1443US7052985B2Contact structure for an integrated semiconductor deviceST MICROELECTRONICS SRL·Filed 2004·Granted May 30, 2006·1 cites·32 claims
- 1542US12068312B2Reverse conducting insulated gate power semiconductor device having low conduction lossesHITACHI ENERGY LTD·Filed 2020·Granted Aug 20, 2024·0 cites·20 claims
- 1642US6734565B2Contact structure for an integrated semiconductor deviceST MICROELECTRONICS SRL·Filed 2002·Granted May 11, 2004·1 cites·12 claims
- 1741US10629714B2Insulated gate bipolar transistorABB SCHWEIZ AG·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 1840US12432950B2Insulated gate bipolar transistor including trench Schottky electrodeHITACHI ENERGY LTD·Filed 2020·Granted Sep 30, 2025·0 cites·20 claims
- 1940US2024038879A1Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor deviceHITACHI ENERGY SWITZERLAND AG·Filed 2021·Application pending·0 cites
- 2037US11075285B2Insulated gate power semiconductor device and method for manufacturing such a deviceABB POWER GRIDS SWITZERLAND AG·Filed 2018·Granted Jul 27, 2021·0 cites·20 claims
- 2137US2021391481A1Power Semiconductor Device and Shadow-Mask Free Method for Producing Such DeviceABB POWER GRIDS SWITZERLAND AG·Filed 2019·Application pending·0 cites
- 2236US9553086B2Reverse-conducting semiconductor deviceABB SCHWEIZ AG·Filed 2016·Granted Jan 24, 2017·0 cites·20 claims
- 2335US10141196B2Power semiconductor device with thick top-metal-design and method for manufacturing such power semiconductor deviceABB SCHWEIZ AG·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 2434US10128361B2Insulated gate power semiconductor device and method for manufacturing such a deviceABB SCHWEIZ AG·Filed 2017·Granted Nov 13, 2018·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Chiara Corvasce files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →