Inventor · disambiguated record
Chad S. Dawson
Also filed as: DAWSON CHAD · DAWSON CHAD S
33 granted patents·5 pending applications·118 citations·filing 2009–2022
96Inventor score
Files withFREESCALE SEMICONDUCTOR INC22DAWSON CHAD S7NXP USA INC5KRISHNA SIDDHARTHA GOPAL2LIN YIZHEN1
Top patents by PatentIndex Score
38 records- 0195US9983032B1Sensor device and method for continuous fault monitoring of sensor deviceNXP USA INC·Filed 2017·Granted May 29, 2018·31 cites·20 claims
- 0292US9790089B2MEMS sensor with side port and method of fabricating sameNXP USA INC·Filed 2017·Granted Oct 17, 2017·9 cites·20 claims
- 0390US9818656B1Devices and methods for testing integrated circuit devicesNXP USA INC·Filed 2017·Granted Nov 14, 2017·8 cites·20 claims
- 0489US9790085B1Actively preventing charge induced leakage of semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Oct 17, 2017·8 cites·12 claims
- 0589US9446940B2Stress isolation for MEMS deviceFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Sep 20, 2016·6 cites·10 claims
- 0687US9791340B2Self test for capacitive pressure sensorsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 17, 2017·5 cites·10 claims
- 0786US12012328B2Stress isolated device package and method of manufactureNXP USA INC·Filed 2021·Granted Jun 18, 2024·1 cites·16 claims
- 0884US9528881B1Stress isolated detector element and microbolometer detector incorporating sameFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Dec 27, 2016·3 cites·20 claims
- 0984US9285289B2Pressure sensor with built-in calibration capabilityFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 15, 2016·4 cites·17 claims
- 1082US9638712B2MEMS device with over-travel stop structure and method of fabricationFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 2, 2017·3 cites·16 claims
- 1181US9458008B1Method of making a MEMS die having a MEMS device on a suspended structureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 4, 2016·3 cites·17 claims
- 1281US8921952B2Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereofDAWSON CHAD S·Filed 2013·Granted Dec 30, 2014·5 cites·16 claims
- 1380US9829406B2Differential capacitive output pressure sensor and methodFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 28, 2017·3 cites·15 claims
- 1478US9663350B2Stress isolated differential pressure sensorFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted May 30, 2017·4 cites·20 claims
- 1573US8701460B2Method and system to compensate for temperature and pressure in piezo resistive devicesKRISHNA SIDDHARTHA GOPAL·Filed 2011·Granted Apr 22, 2014·4 cites·9 claims
- 1672US9346671B2Shielding MEMS structures during wafer dicingFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted May 24, 2016·2 cites·16 claims
- 1771US8245562B2Circuit and method for pressure sensor testingDAWSON CHAD S·Filed 2009·Granted Aug 21, 2012·8 cites·10 claims
- 1869US9157826B2Method and system to compensate for temperature and pressure in piezo resistive devicesKRISHNA SIDDHARTHA GOPAL·Filed 2014·Granted Oct 13, 2015·3 cites·7 claims
- 1967US9927266B2Multi-chip device with temperature control element for temperature calibrationDAWSON CHAD S·Filed 2012·Granted Mar 27, 2018·2 cites·19 claims
- 2067US9285422B2Tester and method for testing a strip of devicesDAWSON CHAD S·Filed 2012·Granted Mar 15, 2016·1 cites·20 claims
- 2166US10295559B2Accelerometer calibration in a rotating memberFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted May 21, 2019·1 cites·10 claims
- 2265US9417146B2Sensor device and related operating methodsDAWSON CHAD S·Filed 2012·Granted Aug 16, 2016·3 cites·20 claims
- 2356US9540227B2Inhibiting propagation of surface cracks in a MEMS deviceFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 10, 2017·0 cites·20 claims
- 2455US9102514B2Inhibiting propagation of surface cracks in a MEMS DeviceFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 11, 2015·0 cites·19 claims
- 2555US2024192072A1System for reading pressure of a pressure sensor and method thereforNXP USA INC·Filed 2022·Application pending·0 cites
- 2654US9488542B2Pressure sensor having multiple pressure cells and sensitivity estimation methodologyFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 8, 2016·0 cites·18 claims
- 2752US9926187B2Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereofDAWSON CHAD S·Filed 2014·Granted Mar 27, 2018·0 cites·18 claims
- 2851US9546925B2Packaged sensor with integrated offset calibrationFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 17, 2017·1 cites·17 claims
- 2948US9176020B2Pressure sensor having multiple pressure cells and sensitivity estimation methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Nov 3, 2015·0 cites·5 claims
- 3046US8922227B2Systems and methods for detecting surface chargeDAWSON CHAD S·Filed 2011·Granted Dec 30, 2014·0 cites·20 claims
- 3146US2016159642A1Stress isolated mems device with asic as capFREESCALE SEMICONDUCTOR INC·Filed 2014·Application pending·0 cites
- 3245US2017081179A1Mems sensor with side port and method of fabricating sameFREESCALE SEMICONDUCTOR INC·Filed 2015·Application pending·0 cites
- 3343US9285404B2Test structure and methodology for estimating sensitivity of pressure sensorsFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 15, 2016·0 cites·14 claims
- 3442US9714879B2Electrically conductive barriers for integrated circuitsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jul 25, 2017·0 cites·21 claims
- 3541US8511170B2Pressure transducer having structure for monitoring surface chargeLIU LIANJUN·Filed 2010·Granted Aug 20, 2013·0 cites·20 claims
- 3641US2014225206A1Pressure level adjustment in a cavity of a semiconductor dieLIN YIZHEN·Filed 2013·Application pending·0 cites
- 3740US10436659B2Pressure sensor device and method for testing the pressure sensor deviceFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Oct 8, 2019·0 cites·20 claims
- 3836US2017115322A1Mems sensor device having integrated multiple stimulus sensingFREESCALE SEMICONDUCTOR INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →