Inventor · disambiguated record
Chelsey Dorow
Also filed as: DOROW CHELSEY · DOROW CHELSEY JANE
14 granted patents·38 pending applications·2 citations·filing 2020–2024
83Inventor score
Top patents by PatentIndex Score
52 records- 0184US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0281US12396217B2Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabricationINTEL CORP·Filed 2020·Granted Aug 19, 2025·1 cites·13 claims
- 0380US12278289B2TMD inverted nanowire integrationINTEL CORP·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 0466US11935956B2TMD inverted nanowire integrationINTEL CORP·Filed 2020·Granted Mar 19, 2024·0 cites·20 claims
- 0560US12369382B2Integrated circuit structures with graphene contactsINTEL CORP·Filed 2021·Granted Jul 22, 2025·0 cites·25 claims
- 0657US12324204B2Transistors including two-dimensional materialsINTEL CORP·Filed 2020·Granted Jun 3, 2025·0 cites·20 claims
- 0756US12432976B2Thin film transistors having strain-inducing structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Sep 30, 2025·0 cites·10 claims
- 0856US12349442B2Thin film transistors having semiconductor structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 0956US12266720B2Transistors with monocrystalline metal chalcogenide channel materialsINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·12 claims
- 1056US2025113573A1Transition metal dichalcogenide monolayer transfer using low strain transfer protective layerINTEL CORP·Filed 2023·Application pending·0 cites
- 1156US2025113520A1Transfer of a 2d material to a target substrateINTEL CORP·Filed 2023·Application pending·0 cites
- 1256US2025112122A1Backside power gatingINTEL CORP·Filed 2023·Application pending·0 cites
- 1356US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1455US12176388B2Transition metal dichalcogenide nanowires and methods of fabricationINTEL CORP·Filed 2020·Granted Dec 24, 2024·0 cites·20 claims
- 1555US2025113540A1Transistor comprising a composite gate dielectric structure and method to provide sameINTEL CORP·Filed 2023·Application pending·0 cites
- 1654US12349438B2Contact gating for 2D field effect transistorsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·21 claims
- 1754US11908950B2Charge-transfer spacers for stacked nanoribbon 2D transistorsINTEL CORP·Filed 2020·Granted Feb 20, 2024·0 cites·24 claims
- 1854US2024222441A1Selective gate oxide formation on 2d material based transistor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1954US2025113599A1Methods for doping 2d transistor devices and resulting architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 2053US12266712B2Transition metal dichalcogenide nanosheet transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·19 claims
- 2153US2023420511A1Stacked single crystal transition-metal dichalcogenide using seeded growthINTEL CORP·Filed 2022·Application pending·0 cites
- 2253US2025113547A1Integrated circuit structures with internal spacers for 2d channel materialsINTEL CORP·Filed 2023·Application pending·0 cites
- 2352US2023420510A1Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channelsINTEL CORP·Filed 2022·Application pending·0 cites
- 2452US2024222461A1Beol contact metals for 2d transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 2552US2024222483A12d nanoribbons utilizing silicon scaffoldingINTEL CORP·Filed 2022·Application pending·0 cites
- 2651US2024222484A1Transistor with channel material in a stack with insulator material supportsINTEL CORP·Filed 2022·Application pending·0 cites
- 2751US2024222482A1Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel regionINTEL CORP·Filed 2022·Application pending·0 cites
- 2851US2023197836A1Integrated circuits with max or mx conductive materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 2951US2024006521A1Back-end-of-line 2d transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 3051US2024222113A1Passivation of crystalline substrate for metal chalcogen material synthesisINTEL CORP·Filed 2022·Application pending·0 cites
- 3151US2023197860A1Metal chalcogenide transistors with defected channel transition layerINTEL CORP·Filed 2021·Application pending·0 cites
- 3251US2024006484A1Contact architecture for 2d stacked nanoribbon transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 3350US2024222428A1Seeded growth for 2d nanoribbon transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3450US2024222485A1Transfer-free 2d fet and fefet device fabrication by 2d material growth in superlattice with nitridesINTEL CORP·Filed 2022·Application pending·0 cites
- 3550US2023099814A1Heterostructure material contacts for 2d transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 3650US2023317783A1Layered 2d semiconductorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3750US2023420364A1Microelectronic die with two dimensional (2d) complementary metal oxide semiconductor devices in an interconnect stack thereofINTEL CORP·Filed 2022·Application pending·0 cites
- 3849US2024006481A1Alternating sacrificial layer materials for mechanically stable 2d nanoribbon etchINTEL CORP·Filed 2022·Application pending·0 cites
- 3949US2023096347A1Cmos integration of 2d material by end etchINTEL CORP·Filed 2021·Application pending·0 cites
- 4049US2023411390A1Two-dimensional pmos devices for providing cmos in back-end layers of integrated circuit devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 4149US2023088101A1Thin film transistors having edge-modulated 2d channel materialINTEL CORP·Filed 2021·Application pending·0 cites
- 4248US12125895B2Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabricationINTEL CORP·Filed 2020·Granted Oct 22, 2024·0 cites·20 claims
- 4348US2023101604A1Three-dimensional memory devices with transition metal dichalcogenide (tmd) channelsINTEL CORP·Filed 2021·Application pending·0 cites
- 4448US2023086499A1Thin film transistors having fin structures integrated with 2d channel materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4548US2023098467A1Thin film transistors having a spin-on 2d channel materialINTEL CORP·Filed 2021·Application pending·0 cites
- 4648US2023113614A1Thin film transistors having cmos functionality integrated with 2d channel materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4747US2023100713A1Integrated circuit structures with improved two-dimensional channel architectureINTEL CORP·Filed 2021·Application pending·0 cites
- 4847US2023101370A1Thin film transistors having multi-layer gate dielectric structures integrated with 2d channel materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4947US2022102495A1Transistors including two-dimensional materialsINTEL CORP·Filed 2020·Application pending·0 cites
- 5046US2022199799A1Thin film transistors having boron nitride integrated with 2d channel materialsINTEL CORP·Filed 2020·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →