Inventor · disambiguated record
Chun-Hsiang Fan
Also filed as: FAN CHUN-HSIANG
37 granted patents·8 pending applications·242 citations·filing 2010–2025
96Inventor score
Top patents by PatentIndex Score
45 records- 0198US10199502B2Structure of S/D contact and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 5, 2019·145 cites·20 claims
- 0296US9543419B1FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·25 cites·20 claims
- 0395US9536962B1Source/drain regions for high electron mobility transistors (HEMT) and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·10 cites·20 claims
- 0495US8987791B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·18 cites·19 claims
- 0593US9620633B2Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·10 cites·20 claims
- 0691US9362386B2FETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·17 claims
- 0788US10446669B2Source and drain surface treatment for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 15, 2019·4 cites·20 claims
- 0887US11158726B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·3 cites·20 claims
- 0987US9159552B2Method of forming a germanium-containing FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·7 cites·20 claims
- 1084US2025056823A1Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1183US12176422B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 1281US11424347B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·1 cites·20 claims
- 1381US10164116B2FETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 1481US9818878B2FETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·2 cites·20 claims
- 1577US2024387709A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1677US2025331235A1Fin with profile controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1777US2025359117A1Semiconductor device structure with finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1876US2025349595A1Controllable oxide recess profile through various wet oxidation processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1975US12191380B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 2075US11923437B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 2175US9559206B2FinFETs with necking in the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·2 cites·20 claims
- 2272US12439643B2Fin shape modificationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 2372US2025349594A1Controllable oxide recess profile through various wet oxidation processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2470US9263586B2Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 16, 2016·2 cites·20 claims
- 2568US11670717B2Structure of S/D contact and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 2663US10930784B2FETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·0 cites·20 claims
- 2763US8999522B26H-indolo[2,3-b]quinoxaline derivatives and organic light emitting diode using the sameCHENG CHIEN-HONG·Filed 2010·Granted Apr 7, 2015·1 cites·20 claims
- 2862US12432954B2Semiconductor device structure with fin and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 2962US10868149B2Source and drain surface treatment for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 3062US10658221B2Semiconductor wafer cleaning apparatus and method for cleaning semiconductor waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·0 cites·20 claims
- 3162US9257323B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 9, 2016·1 cites·19 claims
- 3261US10693009B2Structure of S/D contact and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 23, 2020·0 cites·21 claims
- 3361US9130059B2Method of fabricating a semiconductor device having a capping layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 8, 2015·1 cites·20 claims
- 3460US11823945B2Method for cleaning semiconductor waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 21, 2023·0 cites·20 claims
- 3559US2025372443A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3656US9887274B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·0 cites·20 claims
- 3755US9349841B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 24, 2016·0 cites·20 claims
- 3854US12310093B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 3953US9929248B2Source/drain regions for high electron mobility transistors (HEMT) and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·0 cites·20 claims
- 4052US10354998B2Structures and methods for fabricating semiconductor devices using fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·0 cites·20 claims
- 4151US9953878B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·0 cites·20 claims
- 4251US9871037B2Structures and methods for fabricating semiconductor devices using fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 16, 2018·0 cites·19 claims
- 4347US11133200B2Substrate vapor drying apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 28, 2021·0 cites·20 claims
- 4439US2010244675A1Organometallic complex and organic light-emitting diode including the sameCHENG CHIEN-HONG·Filed 2010·Application pending·0 cites
- 4535US11772134B2Sonic cleaning of brushTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 3, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →