Inventor · disambiguated record

Chieh-Ning Feng

Also filed as: FENG CHIEH-NING

12 granted patents·12 pending applications·11 citations·filing 2019–2025

83Inventor score

Technology areasH10D H10W H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD24

Top patents by PatentIndex Score

24 records

0192US10916477B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·10 cites·20 claims
0283US12363999B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
0382US2025331295A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0482US2025324748A1Semiconductor devices with gate isolation structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0579US2025357402A1Metal bump structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0677US12402404B2Semiconductor devices with interface between gate isolation structure and dummy channel having curved profile and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
0775US2024387539A1Semiconductor devices with edge dielectric fin structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0873US2024371702A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0973US2024363431A1Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1072US11145752B2Residue removal in metal gate cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·1 cites·19 claims
1172US2024321880A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1271US2025287647A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1370US12087639B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
1469US11715736B2Semiconductor devices with gate isolation structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
1569US2024387430A1Metal bump structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1668US12046597B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
1768US2025220971A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1865US12376374B2Semiconductor devices with edge dielectric fin structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 29, 2025·0 cites·20 claims
1963US12328903B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·17 claims
2061US12094782B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·19 claims
2161US12027521B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
2261US11495501B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 8, 2022·0 cites·20 claims
2355US2025366152A1Semiconductor structures and methods avoiding contact leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2454US2024120207A1Semiconductor packages and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →