Inventor · disambiguated record

Ching-Feng Fu

Also filed as: FU CHING-FENG

61 granted patents·13 pending applications·115 citations·filing 2013–2025

98Inventor score

Technology areasH10W H10P H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD70 TAIWAN SEMICONDUCTOR MFG3 TAIWAN TAIWAN SEMICONDUCTOR MFG COMPANY LTD1

Top patents by PatentIndex Score

74 records

0198US11355637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·20 claims
0297US11854814B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
0396US12009429B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
0496US9412656B2Reverse tone self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·23 cites·20 claims
0595US12148622B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·1 cites·20 claims
0695US11380794B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
0795US10050149B1Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·23 cites·20 claims
0894US11769770B2Methods of forming a semiconductor device having an air spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
0993US12009258B2Self-aligned interconnect with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·2 cites·20 claims
1093US9633907B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·10 cites·20 claims
1192US10930564B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·7 cites·20 claims
1289US10998228B2Self-aligned interconnect with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 4, 2021·8 cites·20 claims
1389US2025366190A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1486US9570358B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·3 cites·20 claims
1585US12310051B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
1685US10879129B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
1785US9412614B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
1885US2025120113A1Field effect transistor device with air gap spacer in source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1984US12382654B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
2084US11398385B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·1 cites·20 claims
2184US2025267889A1Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2284US2024371645A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2383US12336236B2Semiconductor device isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
2483US12211937B2Field effect transistor device with air gap spacer in source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
2582US12477821B2Semiconductor device having air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
2682US12293947B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
2782US11355399B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
2882US9911805B2Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·3 cites·20 claims
2981US2025261437A1Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3080US12268027B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
3180US11757010B2Multi-stage etching process for contact formation in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
3280US11715777B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·1 cites·20 claims
3380US2024395556A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3479US11916147B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
3579US9590090B2Method of forming channel of gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·20 claims
3679US9129823B2Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 8, 2015·4 cites·20 claims
3778US2024297076A1Self-aligned interconnect with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3877US11735667B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
3976US12471357B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
4076US12119231B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·0 cites·20 claims
4176US11842930B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
4276US10163723B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
4376US9812536B2Reverse tone self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·2 cites·20 claims
4476US9741621B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 22, 2017·1 cites·20 claims
4576US2024379419A1Semiconductor structure having seam sealedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4676US2025194218A1Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4776US2024387278A1Interconnect structures for semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4875US11935920B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
4974US12142532B2Interconnect structures for semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
5072US12501679B2Interconnect structures for semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·18 claims

Showing the top 50 of 74 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →