Inventor · disambiguated record
Cheng Gan
Also filed as: GAN CHENG
15 granted patents·2 pending applications·11 citations·filing 2015–2024
87Inventor score
Top patents by PatentIndex Score
17 records- 0185US11538780B2Structure and method for isolation of bit-line drivers for a three-dimensional NANDYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Dec 27, 2022·3 cites·8 claims
- 0277US11437464B2Structure and method for forming capacitors for a three-dimensional NANDYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 6, 2022·2 cites·13 claims
- 0377US11031282B2Three-dimensional memory devices with deep isolation structuresYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 0476US12183698B2Structure and method for isolation of bit-line drivers for a three-dimensional NANDYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·19 claims
- 0576US11177343B2Three-dimensional memory devices with backside isolation structuresYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Nov 16, 2021·2 cites·21 claims
- 0674US2024389331A1Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0773US12255164B2Structure and method for isolation of bit-line drivers for a three-dimensional NANDYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 0872US11232825B2Capacitor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 25, 2022·1 cites·18 claims
- 0971US12136449B2Capacitor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 5, 2024·0 cites·17 claims
- 1071US11887646B2Capacitor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 1168US12089413B2Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 1267US11264455B2Backside deep isolation structures for semiconductor device arraysYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 1, 2022·1 cites·21 claims
- 1364US12389611B2Structure and method for forming capacitors for a three-dimensional NANDYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 1458US12278209B2Peripheral circuit having recess gate transistors and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 1552US11270770B2Local word line driver device, memory device, and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 1650US2023124602A1Semiconductor device structure and manufacturing method thereforYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1743US10090916B2Optical module availability detection method and apparatusHUAWEI TECH CO LTD·Filed 2015·Granted Oct 2, 2018·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →