Inventor · disambiguated record
Chirag Garg
Also filed as: GARG CHIRAG
12 granted patents·14 pending applications·8 citations·filing 2019–2024
83Inventor score
Top patents by PatentIndex Score
26 records- 0191US11804321B2Tunable templating layers for perpendicularly magnetized Heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 31, 2023·2 cites·20 claims
- 0290US11665979B2Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 30, 2023·2 cites·11 claims
- 0390US10957848B2Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)IBM·Filed 2019·Granted Mar 23, 2021·3 cites·34 claims
- 0473US11557721B2Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)IBM·Filed 2021·Granted Jan 17, 2023·0 cites·25 claims
- 0573US10916282B2Control of switching trajectory in spin orbit torque devices by micromagnetic configurationIBM·Filed 2019·Granted Feb 9, 2021·1 cites·27 claims
- 0669US12136447B2Tetragonal half metallic half-Heusler compoundsIBM·Filed 2022·Granted Nov 5, 2024·0 cites·25 claims
- 0769US12094508B1Magnetic tunneling junction switching with parallel spin-momentum locked spin currentSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·17 claims
- 0864US11538987B2IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·20 claims
- 0964US2025204269A1Neuromorphic devices of heusler alloy based spin-transfer-torque magnetic tunnel junctionsIBM·Filed 2023·Application pending·0 cites
- 1063US11925124B2Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic dampingSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·11 claims
- 1163US11751486B2Templating layers for perpendicularly magnetized Heusler films/compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 1262US2024349619A1Nitride seed layer with high thermal stability for growth of perpendicularly magnetized heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1358US2024349622A1Templating layers for growth of perpendicularly magnetized heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1458US2024347089A1Fe-x templating layers for growth of perpendicularly magnetized heusler films on top of a tunnel barrierSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1556US2025057050A1Interfacial nitridation for growth of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 1655US12317508B2Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devicesIBM·Filed 2021·Granted May 27, 2025·0 cites·21 claims
- 1755US2025338779A1Lattice-matched oxide layer as tunnel barrier for perpendicularly magnetized heusler compoundsIBM·Filed 2024·Application pending·0 cites
- 1855US2025201290A1Heusler alloy based spin-transfer-torque magnetic tunnel junctions for flash memory and the likeIBM·Filed 2023·Application pending·0 cites
- 1954US2025261567A1Material stack with improved device performance in perpendicularly magnetized heusler filmsIBM·Filed 2024·Application pending·0 cites
- 2053US2024155950A1Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 2153US2025151628A1Mn-Sb COMPOUNDS FOR MAGNETIC RANDOM ACCESS MEMORY FREE LAYERSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2252US2025037550A1Method and electronic device for providing environmental audio alert on personal audio deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2351US2024306517A1Templating layers for spin orbit torque assisted switching of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 2450US2023180624A1Magnetic tunnel junction including hexagonal multi-layered structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2548US12274179B2Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler filmsIBM·Filed 2022·Granted Apr 8, 2025·0 cites·25 claims
- 2640US2023320231A1Tetragonal half metallic heusler compoundsIBM·Filed 2022·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Chirag Garg files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →