Inventor · disambiguated record
Christopher Harris
Also filed as: HARRIS CHRISTOPHER · HARRIS CHRISTOPHER I · HARRIS CHRISTOPHER IAN
36 granted patents·2 pending applications·1,254 citations·filing 1995–2008
98Inventor score
Top patents by PatentIndex Score
38 records- 0191US6091108ASemiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltageABB RESEARCH LTD·Filed 1997·Granted Jul 18, 2000·115 cites·17 claims
- 0291US5977605ASiC Semiconductor device comprising a pn Junction with a voltage absorbing edgeASEA BROWN BOVERI·Filed 1997·Granted Nov 2, 1999·94 cites·3 claims
- 0389US6025608ASemiconductor device of SiC with insulating layer and a refractory metal nitride layerABB RESEARCH LTD·Filed 1997·Granted Feb 15, 2000·89 cites·7 claims
- 0489US5763905ASemiconductor device having a passivation layerABB RESEARCH LTD·Filed 1996·Granted Jun 9, 1998·94 cites·18 claims
- 0587US6104043ASchottky diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted Aug 15, 2000·94 cites·10 claims
- 0685US5851908AMethod for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiCABB RESEARCH LTD·Filed 1995·Granted Dec 22, 1998·71 cites·12 claims
- 0785US5804483AMethod for producing a channel region layer in a sic-layer for a voltage controlled semiconductor deviceABB RESEARCH LTD·Filed 1996·Granted Sep 8, 1998·90 cites·14 claims
- 0882US5663580AOptically triggered semiconductor deviceABB RESEARCH LTD·Filed 1996·Granted Sep 2, 1997·68 cites·16 claims
- 0981US5654208AMethod for producing a semiconductor device having a semiconductor layer of SiC comprising a masking stepABB RESEARCH LTD·Filed 1995·Granted Aug 5, 1997·62 cites·12 claims
- 1080US5900648ASemiconductor device having an insulated gateABB RESEARCH LTD·Filed 1997·Granted May 4, 1999·46 cites·14 claims
- 1179US6306773B1Method of producing a semiconductor device of SiCFiled 2000·Granted Oct 23, 2001·33 cites·21 claims
- 1278US5967795ASiC semiconductor device comprising a pn junction with a voltage absorbing edgeASEA BROWN BOVERI·Filed 1995·Granted Oct 19, 1999·39 cites·17 claims
- 1378US5932894ASiC semiconductor device comprising a pn junctionABB RESEARCH LTD·Filed 1997·Granted Aug 3, 1999·55 cites·16 claims
- 1470US7728403B2Semiconductor deviceCREE SWEDEN AB·Filed 2006·Granted Jun 1, 2010·6 cites·28 claims
- 1569US6127695ALateral field effect transistor of SiC, a method for production thereof and a use of such a transistorACREO AB·Filed 1999·Granted Oct 3, 2000·29 cites·30 claims
- 1667US6670705B1Protective layer for a semiconductor deviceACREO AB·Filed 2000·Granted Dec 30, 2003·17 cites·34 claims
- 1764US7863656B2Semiconductor deviceCREE SWEDEN AB·Filed 2006·Granted Jan 4, 2011·3 cites·20 claims
- 1864US6150671ASemiconductor device having high channel mobility and a high breakdown voltage for high power applicationsABB RESEARCH LTD·Filed 1996·Granted Nov 21, 2000·24 cites·7 claims
- 1964US5831292AIGBT having a vertical channelABB RESEARCH LTD·Filed 1996·Granted Nov 3, 1998·24 cites·6 claims
- 2061US6096627AMethod for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiCABB RESEARCH LTD·Filed 1998·Granted Aug 1, 2000·21 cites·17 claims
- 2159US7768092B2Semiconductor device comprising a junction having a plurality of ringsCREE SWEDEN AB·Filed 2005·Granted Aug 3, 2010·2 cites·32 claims
- 2258US5923051AField controlled semiconductor device of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted Jul 13, 1999·18 cites·10 claims
- 2357US5786251AMethod for producing a channel region layer in a voltage controlled semiconductor deviceABB RESEARCH LTD·Filed 1996·Granted Jul 28, 1998·18 cites·9 claims
- 2455US5773849AField of the inventionABB RESEARCH LTD·Filed 1996·Granted Jun 30, 1998·16 cites·14 claims
- 2554US5847414ASemiconductor device having a hetero-junction between SiC and a Group 3B-nitrideABB RESEARCH LTD·Filed 1997·Granted Dec 8, 1998·16 cites·15 claims
- 2653US5909039AInsulated gate bipolar transistor having a trenchABB RESEARCH LTD·Filed 1997·Granted Jun 1, 1999·15 cites·15 claims
- 2753US5650638ASemiconductor device having a passivation layerABB RESEARCH LTD·Filed 1995·Granted Jul 22, 1997·19 cites·20 claims
- 2852US5698472AMethod and a device for oxidation of a semiconductor layer of SICABB RESEARCH LTD·Filed 1996·Granted Dec 16, 1997·14 cites·18 claims
- 2951US5652437ASemiconductor device with a low resistance ohmic contact between a metal layer and a sic-layerABB RESEARCH LTD·Filed 1996·Granted Jul 29, 1997·13 cites·9 claims
- 3050US6278133B1Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereofACREO AB·Filed 1999·Granted Aug 21, 2001·15 cites·23 claims
- 3150US5798293AMethod for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layerABB RESEARCH LTD·Filed 1997·Granted Aug 25, 1998·17 cites·10 claims
- 3240US6252250B1High power impatt diodeACREO AB·Filed 1999·Granted Jun 26, 2001·7 cites·25 claims
- 3340US2009224354A1Junction barrier schottky diode with submicron channelsCREE INC·Filed 2008·Application pending·0 cites
- 3439US7834396B2Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layerCREE SWEDEN AB·Filed 2004·Granted Nov 16, 2010·0 cites·30 claims
- 3537US7646060B2Method and device of field effect transistor including a base shorted to a source regionCREE SWEDEN AB·Filed 2003·Granted Jan 12, 2010·0 cites·25 claims
- 3637US2002017647A1Junction termination for SiC schottky diodeFiled 2001·Application pending·0 cites
- 3736US5849620AMethod for producing a semiconductor device comprising an implantation stepABB RESEARCH LTD·Filed 1995·Granted Dec 15, 1998·6 cites·18 claims
- 3835US5763902AInsulated gate bipolar transistor having a trench and a method for production thereofABB RESEARCH LTD·Filed 1996·Granted Jun 9, 1998·4 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →