Inventor · disambiguated record
Cheng-Hao Hou
Also filed as: HOU CHENG-HAO
25 granted patents·31 pending applications·43 citations·filing 2009–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD49HOU CHENG-HAO2TAIWAN SEMICONDUCTOR MFG2CHANG CHE-HAO1LEE WEI-YANG1
Top patents by PatentIndex Score
56 records- 0196US12015066B2Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·3 cites·20 claims
- 0295US12040365B1Incorporating nitrogen in dipole engineering for multi-threshold voltage applications in stacked device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·4 cites·20 claims
- 0395US10468258B1Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·15 cites·20 claims
- 0494US9960053B2FinFET doping methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·10 cites·20 claims
- 0588US10964543B2Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 0686US2025351453A1Transistor gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0784US2025344483A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0883US2025331282A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0981US10276399B2FinFET doping methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·2 cites·20 claims
- 1081US2025359091A1Metal-Insulator-Metal Capacitors And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US2025357105A1Aluminum nitride dipole dopant film for tuning multi-vt devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1280US2025357312A1Metal-insulator-metal (mim) capacitors with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1380US2025359296A1Threshold voltage tuning using a multiple dipole loop process for cfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1479US2025351420A1Threshold voltage tuning of nfet via implementation of an aluminum-free conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1579US2025351386A1Semiconductor Device and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US2024379798A1Transistor gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1778US12376364B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1877US2025344423A1Treatment for tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1976US12272735B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 2076US2024347606A1Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2174US11915979B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2274US2024290630A1Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2374US2025234568A1Capacitor device with multi-layer dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2473US2024297084A1High-K Gate Dielectric and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2573US2023378294A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2673US2024413221A1Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2771US2025133759A1Treatment for tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2871US2025089277A1Metal-insulator-metal (mim) capacitors with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2970US2024332004A1Aluminum Nitride Dipole Dopant Film for Tuning Multi-VT DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3069US2024322040A1Threshold voltage tuning of nfet via implementation of an aluminum-free conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3168US12074206B2Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 3268US12020991B2High-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·0 cites·20 claims
- 3368US11462626B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 3468US8580698B2Method for fabricating a gate dielectric layerLEE WEI-YANG·Filed 2010·Granted Nov 12, 2013·2 cites·20 claims
- 3568US2024021667A1Semiconductor Device and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3667US2024088204A1Metal-Insulator-Metal Capacitors And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3766US2024321646A1Threshold voltage tuning using a multiple dipole loop process for cfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3865US12266681B2Capacitor device with multi-layer dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3961US9711373B2Method of fabricating a gate dielectric for high-k metal gate devicesCHANG CHE-HAO·Filed 2009·Granted Jul 18, 2017·2 cites·20 claims
- 4060US2025380484A1Using a dipole layer to dope a gate dielectric of a gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4158US8765603B2Method of forming a buffer layerHOU CHENG-HAO·Filed 2011·Granted Jul 1, 2014·1 cites·20 claims
- 4258US2025259847A1Threshold Voltage Tuning Using Aluminum Layer as Dipole MaterialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4357US2024429156A1Embedding Metal-Insulator-Metal Structure In Silicon Oxide In A Copper Redistribution Layer SchemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4457US2024421065A1Metal-insulator-metal structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4556US9449828B2Method of forming metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·0 cites·20 claims
- 4656US2024313041A1Treatment of Electrodes of MIM CapacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4755US9165826B2Method of forming a semiconductor device comprising titanium silicon oxynitrideTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·0 cites·20 claims
- 4854US10374055B2Buffer layer on semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 6, 2019·0 cites·20 claims
- 4954US9196691B2Metal gate electrode of a field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·0 cites·20 claims
- 5053US11107897B2Methods of forming semiconductor devices and FinFET devices having shielding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·19 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →