Inventor · disambiguated record
Chuan-Lin Hsiao
Also filed as: HSIAO CHUAN-LIN
6 granted patents·3 pending applications·2 citations·filing 2021–2024
68Inventor score
Files withNANYA TECHNOLOGY CORP9
Top patents by PatentIndex Score
9 records- 0191US11832432B2Method of manufacturing memory device having word lines with reduced leakageNANYA TECHNOLOGY CORP·Filed 2021·Granted Nov 28, 2023·2 cites·19 claims
- 0278US12107002B2Manufacturing method of semiconductor structureNANYA TECHNOLOGY CORP·Filed 2023·Granted Oct 1, 2024·0 cites·7 claims
- 0376US2024420992A1Manufacturing method of semiconductor structureNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0472US2024365530A1Memory structure and method of forming thereofNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0570US11935780B2Semiconductor structure and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2021·Granted Mar 19, 2024·0 cites·10 claims
- 0663US12063771B2Memory structure and method of forming thereofNANYA TECHNOLOGY CORP·Filed 2022·Granted Aug 13, 2024·0 cites·13 claims
- 0758US11895830B2Method for manufacturing semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 6, 2024·0 cites·17 claims
- 0852US11688783B1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2021·Granted Jun 27, 2023·0 cites·16 claims
- 0945US2023197771A1Memory device having word lines with reduced leakageNANYA TECHNOLOGY CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →