Inventor · disambiguated record
Chang-Ming Hsieh
Also filed as: HSIEH CHANG-MING
34 granted patents·1,957 citations·filing 1989–1998
98Inventor score
Top patents by PatentIndex Score
34 records- 0199US5528062AHigh-density DRAM structure on soiIBM·Filed 1992·Granted Jun 18, 1996·307 cites·20 claims
- 0299US5466625AMethod of making a high-density DRAM structure on SOIIBM·Filed 1994·Granted Nov 14, 1995·240 cites·3 claims
- 0397US5774411AMethods to enhance SOI SRAM cell stabilityIBM·Filed 1996·Granted Jun 30, 1998·206 cites·20 claims
- 0495US5405795AMethod of forming a SOI transistor having a self-aligned body contactIBM·Filed 1994·Granted Apr 11, 1995·110 cites·10 claims
- 0593US5729039ASOI transistor having a self-aligned body contactIBM·Filed 1996·Granted Mar 17, 1998·100 cites·3 claims
- 0691US6107141AFlash EEPROMIBM·Filed 1998·Granted Aug 22, 2000·83 cites·4 claims
- 0790US5910912AFlash EEPROM with dual-sidewall gateIBM·Filed 1992·Granted Jun 8, 1999·76 cites·6 claims
- 0889US5313094AThermal dissipation of integrated circuits using diamond pathsIBM·Filed 1992·Granted May 17, 1994·134 cites·3 claims
- 0983US5276338ABonded wafer structure having a buried insulation layerIBM·Filed 1992·Granted Jan 4, 1994·68 cites·18 claims
- 1082US5389559AMethod of forming integrated interconnect for very high density DRAMsIBM·Filed 1993·Granted Feb 14, 1995·46 cites·28 claims
- 1181US5340759AMethod of making a vertical gate transistor with low temperature epitaxial channelIBM·Filed 1993·Granted Aug 23, 1994·41 cites·4 claims
- 1279US5366923ABonded wafer structure having a buried insulation layerIBM·Filed 1993·Granted Nov 22, 1994·54 cites·22 claims
- 1379US5137840AVertical bipolar transistor with recessed epitaxially grown intrinsic base regionIBM·Filed 1990·Granted Aug 11, 1992·46 cites·18 claims
- 1478US5283456AVertical gate transistor with low temperature epitaxial channelIBM·Filed 1992·Granted Feb 1, 1994·37 cites·6 claims
- 1577US5202272AField effect transistor formed with deep-submicron gateIBM·Filed 1991·Granted Apr 13, 1993·45 cites·13 claims
- 1676US5962895ASOI transistor having a self-aligned body contactIBM·Filed 1994·Granted Oct 5, 1999·31 cites·4 claims
- 1776US5235206AVertical bipolar transistor with recessed epitaxially grown intrinsic base regionIBM·Filed 1992·Granted Aug 10, 1993·39 cites·5 claims
- 1873US5874764AModular MOSFETS for high aspect ratio applicationsIBM·Filed 1996·Granted Feb 23, 1999·30 cites·6 claims
- 1973US5315151ATransistor structure utilizing a deposited epitaxial base regionIBM·Filed 1993·Granted May 24, 1994·34 cites·9 claims
- 2070US5484738AMethod of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuitsIBM·Filed 1995·Granted Jan 16, 1996·34 cites·4 claims
- 2167US6144081AMethod to suppress subthreshold leakage due to sharp isolation corners in submicron FET structuresIBM·Filed 1995·Granted Nov 7, 2000·22 cites·3 claims
- 2265US5446312AVertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1994·Granted Aug 29, 1995·19 cites·4 claims
- 2364US5567553AMethod to suppress subthreshold leakage due to sharp isolation corners in submicron FET structuresIBM·Filed 1995·Granted Oct 22, 1996·20 cites·14 claims
- 2464US5258640AGate controlled Schottky barrier diodeIBM·Filed 1992·Granted Nov 2, 1993·24 cites·16 claims
- 2560US4997775AMethod for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistorCOOK ROBERT K·Filed 1990·Granted Mar 5, 1991·28 cites·11 claims
- 2659US5521399AAdvanced silicon on oxide semiconductor device structure for BiCMOS integrated circuitIBM·Filed 1994·Granted May 28, 1996·24 cites·16 claims
- 2759US4965217AMethod of making a lateral transistorIBM·Filed 1989·Granted Oct 23, 1990·24 cites·6 claims
- 2853US5371022AMethod of forming a novel vertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1994·Granted Dec 6, 1994·11 cites·6 claims
- 2947US5721144AMethod of making trimmable modular MOSFETs for high aspect ratio applicationsIBM·Filed 1995·Granted Feb 24, 1998·9 cites·11 claims
- 3037US5043786ALateral transistor and method of making sameIBM·Filed 1990·Granted Aug 27, 1991·8 cites·4 claims
- 3132US5341023ANovel vertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1992·Granted Aug 23, 1994·2 cites·3 claims
- 3230US5385850AMethod of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layerIBM·Filed 1991·Granted Jan 31, 1995·3 cites·9 claims
- 3328US5045911ALateral PNP transistor and method for forming sameIBM·Filed 1990·Granted Sep 3, 1991·1 cites·10 claims
- 3428US4996164AMethod for forming lateral PNP transistorIBM·Filed 1989·Granted Feb 26, 1991·1 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →