Inventor · disambiguated record

Chern-Yow Hsu

Also filed as: HSU CHERN-YOW

134 granted patents·13 pending applications·517 citations·filing 2007–2025

99Inventor score

Technology areasH01L H10W H10P H10N G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD132 TAIWAN SEMICONDUCTOR MFG10 HUANG WEI-HANG2 HSU CHERN YOW1 TAIWAN SEMICONDUCTOR MANUFACTACTURING COMPANY LTD1

Top patents by PatentIndex Score

147 records

0199US9818935B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·67 cites·20 claims
0299US9564577B1MRAM device and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·69 cites·20 claims
0398US11973149B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·2 cites·20 claims
0498US11575052B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·4 cites·15 claims
0598US10270025B2Semiconductor structure having magnetic tunneling junction (MTJ) layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·20 cites·20 claims
0698US8872149B1RRAM structure and process using composite spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·61 cites·20 claims
0797US9559294B2Self-aligned magnetoresistive random-access memory (MRAM) structure for process damage minimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·24 cites·20 claims
0897US9209392B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 8, 2015·33 cites·20 claims
0996US10510952B2Storage device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·10 cites·20 claims
1096US10454021B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·12 cites·19 claims
1196US9196825B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 24, 2015·13 cites·20 claims
1296US9040951B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·13 cites·16 claims
1395US11839161B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·2 cites·20 claims
1494US10804411B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·6 cites·20 claims
1593US11264368B2Mask transfer method (and related apparatus) for a bumping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·3 cites·20 claims
1693US10529916B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·6 cites·20 claims
1793US10032828B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·12 cites·19 claims
1893US10003022B2RRAM cell structure with conductive etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 19, 2018·8 cites·20 claims
1993US2025359086A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2092US10535814B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·6 cites·14 claims
2192US9847473B2MRAM structure for process damage minimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 19, 2017·9 cites·20 claims
2291US11800822B2Memory device with composite spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
2391US10439135B2VIA structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 8, 2019·5 cites·20 claims
2491US9837605B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 5, 2017·6 cites·23 claims
2591US9087981B2Methods of forming a magnetic tunnel junction deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 21, 2015·8 cites·20 claims
2690US9614145B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·5 cites·20 claims
2790US2025048935A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2889US12446238B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
2989US10720568B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·3 cites·19 claims
3089US10158069B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
3189US9257498B1Process to improve performance for metal-insulator-metal (MIM) capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·9 cites·20 claims
3289US2024381666A1Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3388US12501625B2Hard mask for MTJ patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
3488US10164184B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
3588US9806254B2Storage device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 31, 2017·4 cites·18 claims
3687US10937950B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 2, 2021·2 cites·20 claims
3787US9660188B2Phase change memory structure to reduce leakage from the heating element to the surrounding materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·6 cites·16 claims
3887US9620582B2Metal-insulator-metal (MIM) capacitors and forming methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·5 cites·20 claims
3986US11050021B2Method for manufacturing resistive random access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·3 cites·19 claims
4086US10763304B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
4185US11227993B2Device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
4285US11063212B2Magnetic tunnel junction device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·2 cites·20 claims
4385US10950656B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
4485US9418999B2MIM capacitors with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·6 cites·19 claims
4584US12245528B2Memory device with composite spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
4684US12133470B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
4784US11765980B2Method for forming a hard mask with a tapered profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·1 cites·20 claims
4884US11222896B2Semiconductor arrangement with capacitor and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·2 cites·20 claims
4984US9172033B2MRAM device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 27, 2015·4 cites·20 claims
5084US2025344610A1Bottom electrode via and conductive barrier design to eliminate electrical short in memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 147 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →