Inventor · disambiguated record
Chin-You Hsu
Also filed as: HSU CHIN-YOU
10 granted patents·5 pending applications·16 citations·filing 2017–2025
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15
Top patents by PatentIndex Score
15 records- 0194US11710638B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 0293US11024505B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 1, 2021·7 cites·20 claims
- 0393US10854459B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·7 cites·20 claims
- 0487US2025308907A1Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0582US12354876B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0682US12294022B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 0781US2025241048A1Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0877US2025338567A1Lowering pmosfet threshold voltage through ternary-element nitrideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0977US2024363719A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1074US11721740B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1171US12068388B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 1271US11088257B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 1371US2025318206A1Lowering pmosfet threshold voltage through ternary-element nitrideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1460US11257921B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
- 1560US10707318B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →