Inventor · disambiguated record
Chen Ming Hu
Also filed as: HU CHEN · HU CHEN MING
15 granted patents·260 citations·filing 1999–2017
93Inventor score
Top patents by PatentIndex Score
15 records- 0197US6703271B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 9, 2004·125 cites·12 claims
- 0293US7226832B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 5, 2007·16 cites·9 claims
- 0386US6924181B2Strained silicon layer semiconductor product employing strained insulator layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·38 cites·16 claims
- 0481US9755007B2Pixel circuitAU OPTRONICS CORP·Filed 2016·Granted Sep 5, 2017·4 cites·17 claims
- 0579US9842891B2Pixel circuitAU OPTRONICS CORP·Filed 2017·Granted Dec 12, 2017·3 cites·13 claims
- 0679US6953972B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 11, 2005·16 cites·5 claims
- 0774US6855994B1Multiple-thickness gate oxide formed by oxygen implantationUNIV CALIFORNIA·Filed 1999·Granted Feb 15, 2005·29 cites·10 claims
- 0872US8559213B2Sub-threshold memory cell circuit with high density and high robustnessYANG JUN·Filed 2009·Granted Oct 15, 2013·9 cites·1 claims
- 0963US8765506B2Manufacturing method of light emitting deviceAU OPTRONICS CORP·Filed 2013·Granted Jul 1, 2014·0 cites·9 claims
- 1063US8723190B2Light emitting device having a patterned conductive layer with at least a passivated side surfaceAU OPTRONICS CORP·Filed 2013·Granted May 13, 2014·0 cites·11 claims
- 1158US7202139B2MOSFET device with a strained channelTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 10, 2007·8 cites·21 claims
- 1257US8563989B2Light emitting device with an electrode having an dual metal alloyYANG CHAO-SHUN·Filed 2012·Granted Oct 22, 2013·0 cites·4 claims
- 1356US7659587B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 9, 2010·0 cites·8 claims
- 1454US6753229B1Multiple-thickness gate oxide formed by oxygen implantationUNIV CALIFORNIA·Filed 1999·Granted Jun 22, 2004·12 cites·6 claims
- 1532US8345468B2Capacity and density enhancement circuit for sub-threshold memory unit arrayUNIV SOUTHEAST·Filed 2009·Granted Jan 1, 2013·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →