Inventor · disambiguated record
Chia-Hsin Hu
Also filed as: HU CHIA-HSIN
30 granted patents·10 pending applications·1,441 citations·filing 2012–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20MEDIATEK INC9TAIWAN SEMICONDUCTOR MFG8HU CHIA-HSIN2HORNG JAW-JUINN1
Top patents by PatentIndex Score
40 records- 0198US8860148B2Structure and method for FinFET integrated with capacitorHU CHIA-HSIN·Filed 2012·Granted Oct 14, 2014·1.3k cites·13 claims
- 0297US8610241B1Homo-junction diode structures using fin field effect transistor processingHU CHIA-HSIN·Filed 2012·Granted Dec 17, 2013·43 cites·20 claims
- 0396US9076869B1FinFET device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 7, 2015·20 cites·20 claims
- 0495US8723225B2Guard rings on fin structuresTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 13, 2014·15 cites·20 claims
- 0593US8946038B2Diode structures using fin field effect transistor processing and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 3, 2015·14 cites·20 claims
- 0686US9812444B2Fin-type resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·5 cites·20 claims
- 0786US9305918B2Method for FinFET integrated with capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 5, 2016·6 cites·19 claims
- 0885US9093566B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·5 cites·20 claims
- 0984US2024321731A1Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1081US9875942B2Guard rings including semiconductor fins and regrown regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·2 cites·20 claims
- 1181US9166067B2Device layout for reference and sensor circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 20, 2015·5 cites·9 claims
- 1281US9053947B2Methods for forming guard rings on fin structuresTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 9, 2015·3 cites·10 claims
- 1380US9679992B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·2 cites·20 claims
- 1479US8736355B2Device layout for reference and sensor circuitsHORNG JAW-JUINN·Filed 2012·Granted May 27, 2014·5 cites·18 claims
- 1577US10998443B2Epi block structure in semiconductor product providing high breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 4, 2021·2 cites·17 claims
- 1675US10163899B2Temperature compensation circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
- 1773US10170414B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
- 1872US12033937B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 9, 2024·0 cites·20 claims
- 1970US9419087B2Bipolar junction transistor formed on fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·2 cites·20 claims
- 2069US9780003B2Bipolar junction transistor formed on fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·1 cites·20 claims
- 2169US9773731B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·1 cites·20 claims
- 2268US9293378B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·1 cites·20 claims
- 2367US9865592B2Method for FinFET integrated with capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·1 cites·20 claims
- 2462US11621351B2Epi block structure in semiconductor product providing high breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 2561US10840181B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
- 2661US2024379549A1Lateral diode for backside power rail applicationMEDIATEK INC·Filed 2024·Application pending·0 cites
- 2760US10340194B2Guard rings including semiconductor fins and regrown regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·0 cites·20 claims
- 2860US2024290780A1Semiconductor structureMEDIATEK INC·Filed 2024·Application pending·0 cites
- 2958US11244944B2Temperature compensation circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 8, 2022·0 cites·20 claims
- 3058US2024178221A1Semiconductor structure of schottky devicesMEDIATEK INC·Filed 2023·Application pending·0 cites
- 3157US2024128262A1Bipolar junction transistor (bjt) structureMEDIATEK INC·Filed 2023·Application pending·0 cites
- 3255US9755075B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 3355US9514989B2Guard rings including semiconductor fins and regrown regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·0 cites·20 claims
- 3455US9281399B2FinFET with high breakdown voltage characteristicsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 8, 2016·0 cites·20 claims
- 3555US2025393296A1Semiconductor structureMEDIATEK INC·Filed 2025·Application pending·0 cites
- 3655US2024014295A1Semiconductor structure of BIPOLAR JUNCTION TRANSISTOR (BJT)MEDIATEK INC·Filed 2023·Application pending·0 cites
- 3754US2024038755A1Semiconductor structure of cell arrayMEDIATEK INC·Filed 2023·Application pending·0 cites
- 3854US2024211673A1Method for designing integrated circuit layout by using analog/mixed-signal standard cells that do not violate layout rules of digital standard cells and associated computer systemMEDIATEK INC·Filed 2023·Application pending·0 cites
- 3951US2022357211A1Integration friendly thermal sensorMEDIATEK INC·Filed 2022·Application pending·0 cites
- 4050US9691758B1Fin-type resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →