Inventor · disambiguated record
Chih-Hsiang Huang
Also filed as: HUANG CHIH-HSIANG
19 granted patents·13 pending applications·136 citations·filing 1998–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD23TAIWAN SEMICONDUCTOR MFG4HUANG CHIH-HSIANG2HUANG LI-PING1NATUREWISE BIOTECH AND MEDICALS CORP1
Top patents by PatentIndex Score
32 records- 0197US8362572B2Lower parasitic capacitance FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·47 cites·7 claims
- 0293US11581226B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·20 claims
- 0393US8697539B2Method of making lower parasitic capacitance FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Apr 15, 2014·14 cites·18 claims
- 0492US8324668B2Dummy structure for isolating devices in integrated circuitsHUANG LI-PING·Filed 2009·Granted Dec 4, 2012·31 cites·23 claims
- 0589US9362278B1FinFET with multiple dislocation planes and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·7 cites·20 claims
- 0685US11949016B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·1 cites·20 claims
- 0781US2025311293A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0881US2025359194A1Source/drain structure for semiconductor devices and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0980US2025351527A1Semiconductor devices with reduced leakage current and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1080US2025357126A1Epitaxial structure for semiconductor devices and method forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US12356660B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1278US2025344450A1Semiconductor Device With Leakage Current Suppression And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1378US2025351454A1Source/Drain Features For Multi-Gate Device And Method Of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1475US8008344B2Compounds for the inhibition of histone deacetylaseNATUREWISE BIOTECH AND MEDICALS CORP·Filed 2007·Granted Aug 30, 2011·7 cites·16 claims
- 1575US2024413018A1Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1675US2024250174A1Mechanisms for growing epitaxy structure of finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1774US11949015B2Mechanisms for growing epitaxy structure of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 1874US2025218779A1Epitaxial structure for semiconductor devices and method forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1974US2024397694A1Semiconductor devices with threshold voltage modulation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2073US2025220981A1Source/drain structure for semiconductor devices and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2172US8112644B2Dynamic voltage scaling scheduling mechanism for sporadic, hard real-time tasks with resource sharingHUANG CHIH-HSIANG·Filed 2007·Granted Feb 7, 2012·11 cites·18 claims
- 2272US2025204014A1Semiconductor devices with reduced leakage current and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2371US12112989B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2469US12490464B2Source/drain features for multi-gate device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 2569US8823099B2Semiconductor device having gradient doping profileTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·2 cites·19 claims
- 2667US12495579B2Semiconductor device with leakage current suppression and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 2764US12213297B2Semiconductor devices with threshold voltage modulation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 2860US8501569B2Semiconductor device having gradient doping profileHUANG CHIH-HSIANG·Filed 2011·Granted Aug 6, 2013·1 cites·18 claims
- 2960US2025324560A1Semiconductor device structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3054US11437516B2Mechanisms for growing epitaxy structure of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 6, 2022·0 cites·20 claims
- 3153US6041597APneumatic/hydraulic balance weight system for mother machinesFiled 1998·Granted Mar 28, 2000·12 cites·11 claims
- 3252US9590101B2FinFET with multiple dislocation planes and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 7, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →