Inventor · disambiguated record
Chang-Chih Huang
Also filed as: HUANG CHANG · HUANG CHANG-CHIH
16 granted patents·21 pending applications·22 citations·filing 2001–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD2DESTA YOHANNES1HON HAI PREC IND CO LTD1LOSEY MATT1
Top patents by PatentIndex Score
37 records- 0192US8305101B2Microelectronic contactor assembly, structures thereof, and methods of constructing sameDESTA YOHANNES·Filed 2010·Granted Nov 6, 2012·16 cites·41 claims
- 0286US2025322871A1Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0381US12387786B2Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 0479US12302767B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 0577US2025359072A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US2025359491A1Planarization-less phase change material switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0776US2025318147A1Memory arrays including continuous line-shaped random access memory strips and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0875US11715519B2Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 0975US2024349630A1Phase change memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1075US2024381792A1In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1174US8278956B2Probecard system and methodLOSEY MATT·Filed 2010·Granted Oct 2, 2012·6 cites·19 claims
- 1274US2025241212A1Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1374US2025318448A1Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1473US12302764B2In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 1573US2025293154A1Layout for reducing loading at line sockets and/or for increasing overlay tolerance while cutting linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1672US12484459B2Planarization-less phase change material switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1771US2024057346A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1869US12369503B2Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1969US11211120B2Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 2068US11532785B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2168US2022336530A1Memory Arrays Including Continuous Line-Shaped Random Access Memory Strips and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2267US12048258B2Phase change memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 2367US2025359034A1Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2465US12354951B2Layout for reducing loading at line sockets and/or for increasing overlay tolerance while cutting linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 2558US11404480B2Memory arrays including continuous line-shaped random access memory strips and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·0 cites·20 claims
- 2657US2025248319A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2756US2025098555A1Spatial light modulator device using a phase change material and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2856US2025224627A1Semiconductor device including spatial light modulator and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2955US2025224630A1Semiconductor device including spatial light modulator and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3054US2024008373A1Pcm deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3153US2024237560A1Phase-change memory device with tapered thermal transfer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3250US2024276897A1Phase change material switch with efficient heat spreader and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3347US10527888B2Liquid crystal display panel and liquid crystal display deviceWUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·16 claims
- 3445US10914980B2Quantum-dot color filter substrate and display panelWUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2018·Granted Feb 9, 2021·0 cites·14 claims
- 3542US9250635B2Fan control system and fan control methodHON HAI PREC IND CO LTD·Filed 2013·Granted Feb 2, 2016·0 cites·15 claims
- 3639US2006181203A1Voltage-tuning multi-layer full-color conjugated polymer LEDMENG HSIN-FEI·Filed 2005·Application pending·0 cites
- 3730US2004094775A1Complementary couple-carry field transistor and the system formed on a substrateFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →