Inventor · disambiguated record
Chih-Fang Huang
Also filed as: HUANG CHIH-FANG
17 granted patents·7 pending applications·17 citations·filing 2005–2024
88Inventor score
Top patents by PatentIndex Score
24 records- 0176US9412807B1Semiconductor structureNAT UNIV TSING HUA·Filed 2015·Granted Aug 9, 2016·4 cites·12 claims
- 0276US7763529B2Method of fabricating silicon carbide (SiC) layerNAT UNIV TSING HUA·Filed 2009·Granted Jul 27, 2010·5 cites·15 claims
- 0371US9502602B2Structure of high electron mobility light emitting transistorNAT UNIV TSING HUA·Filed 2014·Granted Nov 22, 2016·2 cites·20 claims
- 0466US10468519B2Structure of trench metal-oxide-semiconductor field-effect transistorUNIV NAT TSING HUA·Filed 2018·Granted Nov 5, 2019·1 cites·5 claims
- 0566US7643680B2Method of calibrating image luminance valuesAVISION INC·Filed 2005·Granted Jan 5, 2010·2 cites·16 claims
- 0656US9105757B2Junction barrier Schottky diode and manufacturing method thereofHUANG CHIH-FANG·Filed 2013·Granted Aug 11, 2015·1 cites·4 claims
- 0754US2025366106A1Structure of a Planar MOS-gated Semiconductor DeviceUNIV NAT TSING HUA·Filed 2024·Application pending·0 cites
- 0850US9252219B2Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrateHUANG CHIH-FANG·Filed 2014·Granted Feb 2, 2016·0 cites·4 claims
- 0950US8248673B2Image reading apparatus capable of separating pages of imagesHUANG CHIH-FANG·Filed 2009·Granted Aug 21, 2012·0 cites·19 claims
- 1050US2019355847A1Structure of trench metal-oxide-semiconductor field-effect transistorUNIV NAT TSING HUA·Filed 2019·Application pending·0 cites
- 1148US9362381B2Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate and manufacturing method thereofHUANG CHIH-FANG·Filed 2015·Granted Jun 7, 2016·0 cites·4 claims
- 1248US8710551B2High electron mobility transistor and manufacturing method thereofHUANG CHIH-FANG·Filed 2012·Granted Apr 29, 2014·0 cites·5 claims
- 1347US7531846B2LED chip packaging structureRODMAN ELECTRONICS CO LTD·Filed 2008·Granted May 12, 2009·2 cites·6 claims
- 1447US2014187003A1High Electron Mobility Transistor and Manufacturing Method ThereofHUANG CHIH-FANG·Filed 2014·Application pending·0 cites
- 1545US11121235B2Structure and a manufacturing method of a MOSFET with an element of IVA group ion implantationUNIV NAT TSING HUA·Filed 2019·Granted Sep 14, 2021·0 cites·8 claims
- 1644US7483185B2Method of calibrating image luminance valuesAVISION INC·Filed 2005·Granted Jan 27, 2009·0 cites·15 claims
- 1739US2014048815A1Schottky barrier diode and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Application pending·0 cites
- 1837US8981429B2High electron mobility transistor and manufacturing method thereofHUANG CHIH-FANG·Filed 2013·Granted Mar 17, 2015·0 cites·10 claims
- 1937US2013270571A1Schottky barrier diode and manufacturing method thereofHUANG CHIH-FANG·Filed 2012·Application pending·0 cites
- 2036US11810974B2Semiconductor structure with trench junction barrier schottky (TJBS) diodeUNIV NAT TSING HUA·Filed 2021·Granted Nov 7, 2023·0 cites·6 claims
- 2135US2015279961A1METHOD OF MANUFACTURING HIGH POWER VERTICAL GaN-PIN DIODENAT UNIV TSING HUA·Filed 2014·Application pending·0 cites
- 2233US10381474B2Power semiconductor deviceMACROBLOCK INC·Filed 2018·Granted Aug 13, 2019·0 cites·16 claims
- 2328US9865676B2Power semiconductor deviceMACROBLOCK INC·Filed 2016·Granted Jan 9, 2018·0 cites·18 claims
- 2428US2017207085A1Horizontal semiconductor deviceNAT UNIV TSING HUA·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →