Inventor · disambiguated record

Chia-En Huang

Also filed as: HUANG CHIA H · HUANG CHIA-EN · HUANG CHIA-EN KUN

241 granted patents·141 pending applications·321 citations·filing 2006–2025

99Inventor score

Technology areasH10W G11C H10D H10B H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD362 TAIWAN SEMICONDUCTOR MFG8 TAIWAN SEMICONDUCTOR MANFUACTURING COMPANY LTD3 YANG JUNG-PING3 CHENG HONG-CHEN1

Top patents by PatentIndex Score

382 records

0199US11696449B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·4 cites·17 claims
0299US11404099B1Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·9 cites·20 claims
0399US11094387B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·8 cites·20 claims
0498US11950411B2Semiconductor memory devices with dielectric fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·4 cites·20 claims
0598US11563015B2Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·6 cites·20 claims
0698US11532752B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·6 cites·20 claims
0798US11424233B1Memory circuits and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·4 cites·20 claims
0898US11410740B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
0998US11238904B1Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
1098US10971505B1Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·5 cites·20 claims
1198US9117510B2Circuit for memory write data operationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 25, 2015·69 cites·20 claims
1297US12198785B1Semiconductor memory devices with dielectric fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·2 cites·20 claims
1397US12063786B2Compute-in-memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·3 cites·20 claims
1497US11856762B2Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
1597US11735280B2Memory device and operating method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·5 cites·20 claims
1697US11521663B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·5 cites·20 claims
1796US12002499B2Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
1896US11869971B2Multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
1996US11854914B2Systems and methods of testing memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·17 claims
2096US11848381B2Methods of operating multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
2196US11837300B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·2 cites·20 claims
2296US11756591B2Switches to reduce routing rails of memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·3 cites·17 claims
2396US11749664B2Memory circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
2496US11744080B2Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 29, 2023·3 cites·20 claims
2596US11532746B2Multi-bit memory storage device and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·5 cites·20 claims
2695US12062408B2Switches to reduce routing rails of memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·2 cites·18 claims
2795US12014768B2DRAM computation circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
2895US11856761B2Semiconductor memory devices with different doping typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
2995US11758717B2Semiconductor memory devices with one-sided staircase profiles and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
3095US11756640B2MIM efuse memory devices and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
3195US11688481B2Semiconductor memory devices with diode-connected MOSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·2 cites·20 claims
3295US11450362B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·4 cites·20 claims
3395US11423960B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·3 cites·20 claims
3495US11367507B2Memory device and electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
3594US11942177B2Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
3694US11854616B2Memory including metal rails with balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
3794US11398257B2Header layout design including backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·3 cites·20 claims
3893US11996409B2Stacking CMOS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·2 cites·20 claims
3993US11915787B2Integrated circuit device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
4093US11901035B2Method of differentiated thermal throttling of memory and system thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
4193US11018260B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·6 cites·20 claims
4293US9449663B2Circuit for memory write data operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·14 cites·20 claims
4392US12136466B2Header layout design including backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·1 cites·20 claims
4492US12027204B2Memory including metal rails with balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
4592US11791005B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
4692US11756647B2Memory device and electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
4792US2025364028A1Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4891US11676641B2Memory systems with vertical integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
4991US11653492B2Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·2 cites·20 claims
5091US11605639B2One-time-programmable memory device including an antifuse structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims

Showing the top 50 of 382 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →