Inventor · disambiguated record
Chu-Jie Huang
Also filed as: HUANG CHU-JIE
9 granted patents·4 pending applications·12 citations·filing 2018–2025
82Inventor score
Top patents by PatentIndex Score
13 records- 0197US11611038B2Method for forming RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·3 cites·20 claims
- 0288US10950784B2RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 0388US10497436B2Memory device and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·20 claims
- 0483US11017852B2Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·2 cites·20 claims
- 0577US2025351374A1Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0674US12432929B2Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 0773US12040019B2Methods for enlarging the memory window and improving data retention in resistive memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 0865US11682456B2Methods for enlarging the memory window and improving data retention in restistive memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 0965US11011224B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·0 cites·20 claims
- 1064US10181560B2Conductive-bridging random access memory and method for fabricating the sameWINBOND ELECTRONICS CORP·Filed 2018·Granted Jan 15, 2019·1 cites·17 claims
- 1158US2025072003A1Semiconductor device including ferroelectric capacitor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1257US2025228148A1Resistive memory device, semiconductor device including the same, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1354US2024389340A1Ferroelectric tunnel junction with improved ferroelectric response and ferroelectric random access memory employing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →