Inventor · disambiguated record
Chih-Chang Hung
Also filed as: HUNG CHIH-CHANG
37 granted patents·10 pending applications·69 citations·filing 1994–2025
96Inventor score
Top patents by PatentIndex Score
47 records- 0197US11855085B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0297US11830926B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·3 cites·20 claims
- 0395US12094877B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·2 cites·20 claims
- 0495US10468527B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·10 cites·20 claims
- 0594US10854603B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·8 cites·20 claims
- 0692US10916477B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·10 cites·20 claims
- 0791US9236446B2Barc-assisted process for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·10 cites·20 claims
- 0890US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0990US2025126883A1Semiconductor Structure Cutting Process and Structures Formed TherebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1089US10867998B1Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 1187US12218130B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1287US2025098257A1Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1384US12166105B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1484US10461171B2Structure and formation method of semiconductor device with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 1583US2025254977A1Semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1683US2024371870A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1782US10756087B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 1881US12310096B2Method for fabricating semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 1978US11804488B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 2075US11444080B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 2173US11728341B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 2273US11721588B2Semiconductor structure with cutting depth control and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2373US2024363431A1Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2472US11145752B2Residue removal in metal gate cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·1 cites·19 claims
- 2570US12490496B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 2670US12087639B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2770US11637206B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
- 2870US9748109B2CMP-friendly coatings for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·1 cites·20 claims
- 2970US2024387528A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3068US2025220971A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3166US11201230B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·20 claims
- 3266US10833077B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 3365US11211465B2Semiconductor device having gate dielectric and inhibitor film over gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·0 cites·20 claims
- 3464US10872978B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·20 claims
- 3563USD367336SCombined desk lamp and compact disk rackHUNG CHIH-CHANG·Filed 1994·Granted Feb 20, 1996·13 cites·1 claims
- 3662US12243872B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 3762US10510854B2Semiconductor device having gate body and inhibitor film between conductive prelayer over gate body and conductive layer over inhibitor filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·16 claims
- 3861US12484252B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 3961US11495501B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 8, 2022·0 cites·20 claims
- 4059US2025159918A1Gate isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4158US11031290B2Semiconductor structure with cutting depth control and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·0 cites·20 claims
- 4258US10014382B2Semiconductor device with sidewall passivation and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 3, 2018·0 cites·20 claims
- 4357US11011385B2CMP-friendly coatings for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 18, 2021·0 cites·20 claims
- 4453US9478431B2BARC-assisted process for planar recessing or removing of variable-height layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·0 cites·20 claims
- 4552US2025022746A1Isolation between device areasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4649US11398477B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 4747US2023402521A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →