Inventor · disambiguated record
Chia-Yang Hung
Also filed as: HUNG CHIA-YANG
15 granted patents·12 pending applications·12 citations·filing 2012–2025
87Inventor score
Top patents by PatentIndex Score
27 records- 0190US10510553B1Dry ashing by secondary excitationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 0289US2025351504A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0387US11855153B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 0483US11923433B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
- 0583US2024387646A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0681US12217936B2DC bias in plasma processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·19 claims
- 0780US12293910B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 0879US2023387222A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0978US12424444B2Soft ashing process for forming protective layer on conductive cap layer of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 1078US2024379344A1Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1177US12278277B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 1277US2024379378A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1376US11854766B2DC bias in plasma processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1475US11404245B2DC bias in plasma processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 2, 2022·1 cites·20 claims
- 1574US10755945B2Metal contacts on metal gates and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·20 claims
- 1674US2024387517A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1773US2024395536A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1870US12205816B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·20 claims
- 1970US12154784B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 2067US2025221000A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2164US12033860B2Soft ashing process for forming protective layer on conductive cap layer of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·19 claims
- 2264US8872301B2Dual profile shallow trench isolation apparatus and systemHUNG CHIA-YANG·Filed 2012·Granted Oct 28, 2014·3 cites·20 claims
- 2364US2023268223A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2462US2020388504A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 2559US2024387698A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2657US2020098588A1Dry Ashing by Secondary ExcitationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
- 2749US12125898B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →