Inventor · disambiguated record
Christian Jaeger
Also filed as: JAEGER CHRISTIAN
39 granted patents·1 pending application·84 citations·filing 1993–2024
96Inventor score
Top patents by PatentIndex Score
40 records- 0193US9105679B2Semiconductor device and insulated gate bipolar transistor with barrier regionsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 11, 2015·17 cites·20 claims
- 0290US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
- 0389US10876344B2Carrier with pivotable clamping part and assembly methodBROSE FAHRZEUGTEILE·Filed 2019·Granted Dec 29, 2020·9 cites·18 claims
- 0489US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
- 0588US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
- 0686US10978560B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·3 cites·17 claims
- 0786US9997602B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 12, 2018·4 cites·22 claims
- 0882US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 0982US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 1082US2025081563A1Power Semiconductor Device with dV/dt Controllability and Low Gate ChargeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1180US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 1279US10224206B2Bipolar transistor device with an emitter having two types of emitter regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 5, 2019·2 cites·29 claims
- 1379US9576944B2Semiconductor devices with transistor cells and thermoresistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 21, 2017·4 cites·25 claims
- 1477US12199146B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 14, 2025·0 cites·17 claims
- 1576US9691887B2Semiconductor device with variable resistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
- 1674US12224317B2Vertical power semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2023·Granted Feb 11, 2025·0 cites·18 claims
- 1773US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 1872US11682700B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jun 20, 2023·0 cites·13 claims
- 1972US11594621B2Method of processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 28, 2023·0 cites·27 claims
- 2068US11610986B2Power semiconductor switch having a cross-trench structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 21, 2023·0 cites·16 claims
- 2162US11742384B2Vertical power semiconductor device including a field stop region having a plurality of impurity peaksINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·0 cites·14 claims
- 2261US11075290B2Power semiconductor device having a cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·18 claims
- 2358US10930772B2IGBT having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 23, 2021·0 cites·24 claims
- 2458US8406990B2Navigational deviceBARKOWSKI ANDRE·Filed 2003·Granted Mar 26, 2013·14 cites·12 claims
- 2555US10825906B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 3, 2020·0 cites·21 claims
- 2654US11569392B2Power semiconductor diode including field stop regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 2754US10439055B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 8, 2019·0 cites·24 claims
- 2854US9245984B2Reverse blocking semiconductor device, semiconductor device with local emitter efficiency modification and method of manufacturing a reverse blocking semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 26, 2016·0 cites·21 claims
- 2953US10910487B2Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 3052US11257914B2Semiconductor die, semiconductor device and IGBT moduleINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 22, 2022·0 cites·22 claims
- 3152US9679892B2Method of manufacturing a reverse blocking semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 13, 2017·0 cites·12 claims
- 3251US9653568B2Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structuresINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 16, 2017·0 cites·5 claims
- 3350US9741571B2Bipolar transistor device with an emitter having two types of emitter regionsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Aug 22, 2017·0 cites·7 claims
- 3449US10347754B2Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 9, 2019·0 cites·19 claims
- 3543US10608104B2Trench transistor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 31, 2020·0 cites·26 claims
- 3642US9647100B2Semiconductor device with auxiliary structure including deep level dopantsINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 9, 2017·0 cites·25 claims
- 3741US10033370B2Circuit and method for driving a power semiconductor switchINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 24, 2018·0 cites·16 claims
- 3841US9543398B2Semiconductor switching device including charge storage structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 10, 2017·0 cites·22 claims
- 3937US5546396AMethod and apparatus for communicating between a plurality of subcomponentsSEXTANT AVIONIQUE·Filed 1993·Granted Aug 13, 1996·12 cites·27 claims
- 4036US10096531B2Semiconductor device with sensor potential in the active regionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 9, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →