Inventor · disambiguated record
Chakrapani G. Jambotkar
Also filed as: JAMBOTKAR CHAKRAPANI G · JAMBOTKAR CHAKRAPANI GAJANAN
23 granted patents·642 citations·filing 1976–1990
97Inventor score
Files withIBM23
Top patents by PatentIndex Score
23 records- 0197US4145700APower field effect transistorsIBM·Filed 1977·Granted Mar 20, 1979·86 cites·9 claims
- 0297US4055884AFabrication of power field effect transistors and the resulting structuresIBM·Filed 1976·Granted Nov 1, 1977·80 cites·11 claims
- 0388US4378627ASelf-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodesIBM·Filed 1980·Granted Apr 5, 1983·50 cites·8 claims
- 0487US4663832AMethod for improving the planarity and passivation in a semiconductor isolation trench arrangementIBM·Filed 1984·Granted May 12, 1987·40 cites·10 claims
- 0586US4319932AMethod of making high performance bipolar transistor with polysilicon base contactsIBM·Filed 1980·Granted Mar 16, 1982·51 cites·26 claims
- 0684US4689869AFabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel lengthIBM·Filed 1986·Granted Sep 1, 1987·47 cites·30 claims
- 0782US4264857AConstant voltage threshold deviceIBM·Filed 1978·Granted Apr 28, 1981·25 cites·9 claims
- 0877US4488162ASelf-aligned metal field effect transistor integrated circuits using polycrystalline silicon gate electrodesIBM·Filed 1983·Granted Dec 11, 1984·28 cites·13 claims
- 0975US4087832ATwo-phase charge coupled device structureIBM·Filed 1976·Granted May 2, 1978·19 cites·14 claims
- 1072US4471522ASelf-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodesIBM·Filed 1983·Granted Sep 18, 1984·24 cites·8 claims
- 1169US5064772ABipolar transistor integrated circuit technologyIBM·Filed 1990·Granted Nov 12, 1991·30 cites·10 claims
- 1266US4128439AMethod for forming self-aligned field effect device by ion implantation and outdiffusionIBM·Filed 1977·Granted Dec 5, 1978·21 cites·12 claims
- 1364US4933302AFormation of laser mirror facets and integration of optoelectronicsIBM·Filed 1989·Granted Jun 12, 1990·14 cites·20 claims
- 1463US4954457AMethod of making heterojunction bipolar transistorsIBM·Filed 1990·Granted Sep 4, 1990·22 cites·23 claims
- 1562US4195307AFabricating integrated circuits incorporating high-performance bipolar transistorsIBM·Filed 1978·Granted Mar 25, 1980·20 cites·5 claims
- 1657US4981807AProcess for fabricating complementary vertical transistor memory cellIBM·Filed 1988·Granted Jan 1, 1991·16 cites·8 claims
- 1756US4935797AHeterojunction bipolar transistorsIBM·Filed 1988·Granted Jun 19, 1990·15 cites·10 claims
- 1856US4294002AMaking a short-channel FETIBM·Filed 1979·Granted Oct 13, 1981·16 cites·8 claims
- 1952US4155121ARedundant charge-coupled device and methodIBM·Filed 1978·Granted May 15, 1979·8 cites·16 claims
- 2050US4099987AFabricating integrated circuits incorporating high-performance bipolar transistorsIBM·Filed 1977·Granted Jul 11, 1978·12 cites·26 claims
- 2143US4967253ABipolar transistor integrated circuit technologyIBM·Filed 1988·Granted Oct 30, 1990·9 cites·9 claims
- 2240US4223329ABipolar dual-channel charge-coupled deviceIBM·Filed 1978·Granted Sep 16, 1980·4 cites·7 claims
- 2335US4584763AOne mask technique for substrate contacting in integrated circuits involving deep dielectric isolationIBM·Filed 1983·Granted Apr 29, 1986·5 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →