Inventor · disambiguated record
Changming Jin
Also filed as: JIN CHANGMING
24 granted patents·9 pending applications·547 citations·filing 1997–2023
96Inventor score
Top patents by PatentIndex Score
33 records- 0196US6059553AIntegrated circuit dielectricsTEXAS INSTRUMENTS INC·Filed 1997·Granted May 9, 2000·131 cites·6 claims
- 0295US10367110B2Photovoltaic devices and method of manufacturingFIRST SOLAR INC·Filed 2016·Granted Jul 30, 2019·9 cites·23 claims
- 0394US10896991B2Photovoltaic devices and method of manufacturingFIRST SOLAR INC·Filed 2019·Granted Jan 19, 2021·8 cites·20 claims
- 0490US6008540AIntegrated circuit dielectric and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 28, 1999·81 cites·2 claims
- 0589US6351039B1Integrated circuit dielectric and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 26, 2002·99 cites·4 claims
- 0686US7476602B2N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2005·Granted Jan 13, 2009·10 cites·12 claims
- 0784US6838300B2Chemical treatment of low-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 4, 2005·34 cites·20 claims
- 0881US6265303B1Integrated circuit dielectric and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Jul 24, 2001·46 cites·4 claims
- 0973US6284675B1Method of forming integrated circuit dielectric by evaporating solvent to yield phase separationTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 4, 2001·42 cites·1 claims
- 1071US6573167B2Using a carbon film as an etch hardmask for hard-to-etch materialsTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 3, 2003·13 cites·19 claims
- 1166US6911394B2Semiconductor devices and methods of manufacturing such semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 28, 2005·11 cites·11 claims
- 1264US7910936B2N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 22, 2011·1 cites·17 claims
- 1364US6800928B1Porous integrated circuit dielectric with decreased surface porosityTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 5, 2004·27 cites·2 claims
- 1464US2025136762A1Host group-containing polymerizable monomer, polymer material, and method for manufacturing sameUNIV OSAKA·Filed 2022·Application pending·0 cites
- 1564US2025206938A1Composite material and method for producing same, and crosslinking agentUNIV OSAKA·Filed 2023·Application pending·0 cites
- 1661US6800547B2Integrated circuit dielectric and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 5, 2004·5 cites·2 claims
- 1757US7732324B2Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 8, 2010·1 cites·25 claims
- 1857US7187080B2Semiconductor device with a conductive layer including a copper layer with a dopantTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 6, 2007·6 cites·2 claims
- 1957US6583053B2Use of a sacrificial layer to facilitate metallization for small featuresTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 24, 2003·6 cites·16 claims
- 2057US2013180579A1Photovoltaic device having an absorber multilayer and method of manufacturing the sameFIRST SOLAR INC·Filed 2013·Application pending·0 cites
- 2156US6723636B1Methods for forming multiple damascene layersTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 20, 2004·7 cites·4 claims
- 2255US7745335B2Semiconductor device manufactured by reducing hillock formation in metal interconnectsTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 29, 2010·1 cites·10 claims
- 2352US2018323332A1Integrated Vapor Transport Deposition Method and SystemFIRST SOLAR INC·Filed 2018·Application pending·0 cites
- 2449US2013203202A1Integrated vapor transport deposition method and systemFIRST SOLAR INC·Filed 2013·Application pending·0 cites
- 2544US6903000B2System for improving thermal stability of copper damascene structureTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 7, 2005·1 cites·8 claims
- 2644US2005186788A1System for improving thermal stability of copper damascene structureFiled 2005·Application pending·0 cites
- 2743US2022102567A1Metal oxynitride back contact layers for photovoltaic devicesFIRST SOLAR INC·Filed 2020·Application pending·0 cites
- 2842US6784121B1Integrated circuit dielectric and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 31, 2004·8 cites·7 claims
- 2940US7037823B2Method to reduce silanol and improve barrier properties in low k dielectric ic interconnectsTEXAS INSTRUMENTS INC·Filed 2004·Granted May 2, 2006·0 cites·14 claims
- 3036US2002090834A1Method for depositing silicon dioxide on a substrate surface using hexamethyldisiloxane (HMDSO) as a precursor gasFiled 2001·Application pending·0 cites
- 3136US2004152296A1Hexamethyldisilazane treatment of low-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2003·Application pending·0 cites
- 3233US11913395B2Intelligent control method, apparatus, storage medium and device for engine initiationGEELY HOLDING GROUP CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·8 claims
- 3330US6424040B1Integration of fluorinated dielectrics in multi-level metallizationsTEXAS INSTRUMENTS INC·Filed 1999·Granted Jul 23, 2002·0 cites·2 claims
Join the waitlist — get patent alerts
Get an alert when Changming Jin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →