Inventor · disambiguated record
Chulmin Jung
Also filed as: JUNG CHULMIN
96 granted patents·17 pending applications·748 citations·filing 2004–2024
99Inventor score
Top patents by PatentIndex Score
113 records- 0199US7061817B2Data path having grounded precharge operation and test compression capabilityMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 13, 2006·421 cites·21 claims
- 0297US11049552B1Write assist circuitry for memoryQUALCOMM INC·Filed 2020·Granted Jun 29, 2021·7 cites·20 claims
- 0395US11250895B1Systems and methods for driving wordlines using set-reset latchesQUALCOMM INC·Filed 2020·Granted Feb 15, 2022·6 cites·28 claims
- 0495US9865337B1Write data path to reduce charge leakage of negative boostQUALCOMM INC·Filed 2017·Granted Jan 9, 2018·20 cites·20 claims
- 0595US9401201B1Write driver for memoryQUALCOMM INC·Filed 2015·Granted Jul 26, 2016·21 cites·18 claims
- 0693US8617952B2Vertical transistor with hardening implatationKIM YOUNG PIL·Filed 2010·Granted Dec 31, 2013·15 cites·10 claims
- 0792US11450359B1Memory write methods and circuitsQUALCOMM INC·Filed 2021·Granted Sep 20, 2022·4 cites·21 claims
- 0890US11640838B2Pseudo-dual-port SRAM with burst-mode address comparatorQUALCOMM INC·Filed 2021·Granted May 2, 2023·2 cites·29 claims
- 0990US9916892B1Write driver circuitry to reduce leakage of negative boost chargeQUALCOMM INC·Filed 2017·Granted Mar 13, 2018·10 cites·17 claims
- 1090US8289751B2Non-volatile memory cell with programmable unipolar switching elementTIAN WEI·Filed 2011·Granted Oct 16, 2012·14 cites·20 claims
- 1190US7974117B2Non-volatile memory cell with programmable unipolar switching elementSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Jul 5, 2011·27 cites·20 claims
- 1289US7935619B2Polarity dependent switch for resistive sense memorySEAGATE TECHNOLOGY LLC·Filed 2010·Granted May 3, 2011·9 cites·20 claims
- 1388US10770132B1SRAM with burst mode address comparatorQUALCOMM INC·Filed 2019·Granted Sep 8, 2020·8 cites·22 claims
- 1488US8208285B2Vertical non-volatile switch with punchthrough access and method of fabrication thereforKHOURY MAROUN GEORGES·Filed 2009·Granted Jun 26, 2012·14 cites·17 claims
- 1587US8045361B2Non-volatile memory cell with complementary resistive memory elementsSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Oct 25, 2011·19 cites·20 claims
- 1684US8183126B2Patterning embedded control lines for vertically stacked semiconductor elementsLEE HYUNG-KYU·Filed 2009·Granted May 22, 2012·10 cites·7 claims
- 1783US11092646B1Determining a voltage and/or frequency for a performance modeQUALCOMM INC·Filed 2020·Granted Aug 17, 2021·2 cites·10 claims
- 1882US11935606B2Memory with scan chain testing of column redundancy logic and multiplexingQUALCOMM INC·Filed 2021·Granted Mar 19, 2024·1 cites·17 claims
- 1981US7894286B2Array sense amplifiers, memory devices and systems including same, and methods of operationMICRON TECHNOLOGY INC·Filed 2009·Granted Feb 22, 2011·11 cites·38 claims
- 2078US11462263B2Burst-mode memory with column multiplexerQUALCOMM INC·Filed 2020·Granted Oct 4, 2022·1 cites·24 claims
- 2178US10796735B1Read tracking scheme for a memory deviceQUALCOMM INC·Filed 2019·Granted Oct 6, 2020·4 cites·15 claims
- 2278US9536578B2Apparatus and method for writing data to memory array circuitsQUALCOMM INC·Filed 2013·Granted Jan 3, 2017·6 cites·33 claims
- 2377US8582347B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2013·Granted Nov 12, 2013·4 cites·20 claims
- 2476US11170845B1Techniques for reducing rock bottom leakage in memoryQUALCOMM INC·Filed 2020·Granted Nov 9, 2021·1 cites·20 claims
- 2576US8004872B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2008·Granted Aug 23, 2011·7 cites·20 claims
- 2675US11488658B2Write assist scheme with bitlineQUALCOMM INC·Filed 2020·Granted Nov 1, 2022·1 cites·27 claims
- 2775US8369162B2Input-output line sense amplifier having adjustable output drive capabilityMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 5, 2013·3 cites·17 claims
- 2874US12327599B2Memory with scan chain testing of column redundancy logic and multiplexingQUALCOMM INC·Filed 2024·Granted Jun 10, 2025·0 cites·14 claims
- 2973US9997208B1High-speed level shifterQUALCOMM INC·Filed 2017·Granted Jun 12, 2018·3 cites·23 claims
- 3073US9640231B1Shared sense amplifierQUALCOMM INC·Filed 2016·Granted May 2, 2017·3 cites·28 claims
- 3173US7212460B1Line amplifier to supplement line driver in an integrated circuitMICRON TECHNOLOGY INC·Filed 2005·Granted May 1, 2007·8 cites·51 claims
- 3272US8072014B2Polarity dependent switch for resistive sense memoryJUNG CHULMIN·Filed 2010·Granted Dec 6, 2011·3 cites·20 claims
- 3372US7825478B2Polarity dependent switch for resistive sense memorySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Nov 2, 2010·5 cites·16 claims
- 3472US7596039B2Input-output line sense amplifier having adjustable output drive capabilityMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 29, 2009·5 cites·19 claims
- 3569US12014771B2Method of pseudo-triple-port SRAM datapathsQUALCOMM INC·Filed 2023·Granted Jun 18, 2024·0 cites·7 claims
- 3669US8644095B2Input-output line sense amplifier having adjustable output drive capabilityMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 4, 2014·2 cites·23 claims
- 3769US7830708B1Compensating for variations in memory cell programmed state distributionsSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Nov 9, 2010·6 cites·20 claims
- 3869US2024395320A1Memory with double redundancyQUALCOMM INC·Filed 2024·Application pending·0 cites
- 3968US7567465B2Power saving sensing scheme for solid state memoryMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 28, 2009·5 cites·23 claims
- 4067US12094528B2Memory with double redundancyQUALCOMM INC·Filed 2022·Granted Sep 17, 2024·0 cites·15 claims
- 4166US9940987B2High-speed word line decoder and level-shifterQUALCOMM INC·Filed 2016·Granted Apr 10, 2018·2 cites·19 claims
- 4266US9851730B2Voltage droop controlQUALCOMM INC·Filed 2015·Granted Dec 26, 2017·1 cites·29 claims
- 4366US8363449B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2011·Granted Jan 29, 2013·2 cites·23 claims
- 4464US9071239B2Method and semiconductor apparatus for reducing power when transmitting data between devices in the semiconductor apparatusQUALCOMM INC·Filed 2013·Granted Jun 30, 2015·2 cites·36 claims
- 4564US8896070B2Patterning embedded control lines for vertically stacked semiconductor elementsLEE HYUNG-KYU·Filed 2012·Granted Nov 25, 2014·2 cites·15 claims
- 4664US8085606B2Input-output line sense amplifier having adjustable output drive capabilityKIM KANG YONG·Filed 2009·Granted Dec 27, 2011·3 cites·12 claims
- 4764US7800941B2Magnetic memory with magnetic tunnel junction cell setsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Sep 21, 2010·5 cites·20 claims
- 4864US7433249B2Apparatus with equalizing voltage generation circuit and methods of useMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 7, 2008·4 cites·27 claims
- 4963US10923185B2SRAM with burst mode operationQUALCOMM INC·Filed 2019·Granted Feb 16, 2021·1 cites·14 claims
- 5063US7606097B2Array sense amplifiers, memory devices and systems including same, and methods of operationMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 20, 2009·4 cites·77 claims
Showing the top 50 of 113 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →