Inventor · disambiguated record
Chul-Sung Kim
Also filed as: KIM CHUL · KIM CHUL-SUNG
64 granted patents·12 pending applications·738 citations·filing 1996–2024
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD49EXXONMOBIL UPSTREAM RES CO5KIM CHUL-SUNG4KIM JIN-BUM4SAMSUNG KWANGJU ELECTRONICS CO3
Top patents by PatentIndex Score
76 records- 0197US9876094B2Method for fabricating semiconductor device having a silicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 23, 2018·20 cites·20 claims
- 0296US10079210B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 18, 2018·32 cites·20 claims
- 0395US10714579B2Semiconductor devices including recessed source/drain silicides and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·11 cites·18 claims
- 0494US10283600B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 7, 2019·13 cites·20 claims
- 0593US9679977B2Semiconductor device and method of fabricating the sameKIM JIN-BUM·Filed 2015·Granted Jun 13, 2017·9 cites·20 claims
- 0691US9859387B2Semiconductor device having contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·9 cites·17 claims
- 0790US7565243B2Rapid method for reservoir connectivity analysis using a fast marching methodEXXONMOBIL UPSTREAM RES CO·Filed 2006·Granted Jul 21, 2009·31 cites·27 claims
- 0890US6383877B1Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 7, 2002·49 cites·10 claims
- 0990US6140643AMethod for identification of unknown substancesEXXONMOBIL UPSTREAM RES CO·Filed 1999·Granted Oct 31, 2000·104 cites·19 claims
- 1089US7419918B2Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·13 cites·23 claims
- 1187US6849520B2Method and device for forming an STI type isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·38 cites·2 claims
- 1286US9972716B2Semiconductor devicesKIM JIN BUM·Filed 2015·Granted May 15, 2018·5 cites·18 claims
- 1385US10269629B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 1484US10128245B2Semiconductor devices including active areas with increased contact areaSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 1584US9240323B2Methods of forming semiconductor devices with metal silicide using pre-amorphization implantsSHIN CHUNG-HWAN·Filed 2013·Granted Jan 19, 2016·6 cites·16 claims
- 1684US6624496B2Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 23, 2003·29 cites·6 claims
- 1783US10262937B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 16, 2019·4 cites·15 claims
- 1882US9275995B2Semiconductor devices having composite spacers containing different dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·6 cites·15 claims
- 1980US10332984B2Semiconductor devices having reduced contact resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·3 cites·7 claims
- 2080US9239398B2Method of generating and combining multiple horizons to determine a seismic horizon and its uncertaintyKIM CHUL-SUNG·Filed 2012·Granted Jan 19, 2016·5 cites·20 claims
- 2180US6890823B2Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·28 cites·30 claims
- 2279US10134856B2Semiconductor device including contact plug and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·18 claims
- 2379US9412731B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·5 cites·20 claims
- 2479US7585729B2Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·6 cites·33 claims
- 2579US6435841B1Hermetic reciprocating compressorSAMSUNG KWANGJU ELECTRONICS CO·Filed 2000·Granted Aug 20, 2002·17 cites·13 claims
- 2678US10403717B2Semiconductor devices including contact structures that partially overlap silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·2 cites·20 claims
- 2778US8884964B2Functional-based knowledge analysis in a 2D and 3D visual environmentHOLL JAMES E·Filed 2009·Granted Nov 11, 2014·12 cites·22 claims
- 2878US6329276B1Method of forming self-aligned silicide in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 11, 2001·44 cites·13 claims
- 2976US6660613B2Method and device for forming an STI type isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·18 cites·22 claims
- 3075US8008214B2Method of forming an insulation structure and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 30, 2011·4 cites·14 claims
- 3175US7608509B2Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·6 cites·14 claims
- 3274US8865116B2Method for preparation of hematite iron oxide with different nanostructures and hematite iron oxide prepared therebyUNIV KOREA RES & BUS FOUND·Filed 2012·Granted Oct 21, 2014·4 cites·5 claims
- 3374US7330791B2Method for rapid fault interpretation of fault surfaces generated to fit three-dimensional seismic discontinuity dataEXXONMOBIL UPSTREAM RES CO·Filed 2003·Granted Feb 12, 2008·33 cites·14 claims
- 3471US10840374B2Semiconductor devices with shaped portions of elevated source/drain regionsSHIN CHUNG HWAN·Filed 2018·Granted Nov 17, 2020·1 cites·20 claims
- 3571US9768255B2Semiconductor devices including contact structures that partially overlap silicide layersLEE DO-SUN·Filed 2016·Granted Sep 19, 2017·2 cites·19 claims
- 3671US8008154B2Methods of forming impurity containing insulating films and flash memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·3 cites·21 claims
- 3771US7579249B2Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·3 cites·7 claims
- 3870US10062754B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 28, 2018·2 cites·17 claims
- 3970US7692196B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·4 cites·18 claims
- 4069US7893482B2Semiconductor devices having tunnel and gate insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·3 cites·10 claims
- 4166US10043902B2Semiconductor devices with shaped portions of elevated source/drain regionsSHIN CHUNG HWAN·Filed 2015·Granted Aug 7, 2018·1 cites·9 claims
- 4266US9022129B2Tracking geologic object and detecting geologic anomalies in exploration seismic data volumeDOBIN MARK W·Filed 2009·Granted May 5, 2015·8 cites·25 claims
- 4366US8365831B2Determining connectivity architecture in 2-D and 3-D heterogeneous dataEXXONMOBIL UPSTREAM RES CO·Filed 2008·Granted Feb 5, 2013·7 cites·17 claims
- 4466US6442487B2Reliability measures for statistical prediction of geophysical and geological parameters in geophysical prospectingEXXONMOBIL UPSTREAM RES CO·Filed 2000·Granted Aug 27, 2002·25 cites·13 claims
- 4566US6149402ASuction muffler for hermetic reciprocating compressorSAMSUNG KWANGJU ELECTRONICS CO·Filed 1997·Granted Nov 21, 2000·33 cites·4 claims
- 4665US6450297B1Hermetic compressorSAMSUNG KWANGJU ELECTRONICS CO·Filed 2000·Granted Sep 17, 2002·8 cites·2 claims
- 4764US8598024B2Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the methodKIM JIN-BUM·Filed 2011·Granted Dec 3, 2013·1 cites·18 claims
- 4864US7511340B2Semiconductor devices having gate structures and contact pads that are lower than the gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·2 cites·15 claims
- 4962US10998412B2Semiconductor devices including recessed source/drain silicides and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 4, 2021·0 cites·20 claims
- 5058US2025185294A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →