Inventor · disambiguated record
Chih-Hsin Ko
Also filed as: KO CHIH-HSIN
198 granted patents·20 pending applications·9,217 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD101TAIWAN SEMICONDUCTOR MFG64KO CHIH-HSIN17WU CHENG-HSIEN8WANN CLEMENT HSINGJEN6
Top patents by PatentIndex Score
218 records- 0199US9859380B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·205 cites·20 claims
- 0299US9601342B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·288 cites·20 claims
- 0399US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0499US9548303B2FinFET devices with unique fin shape and the fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·1.3k cites·20 claims
- 0599US8836016B2Semiconductor structures and methods with high mobility and high energy bandgap materialsWU CHENG-HSIEN·Filed 2012·Granted Sep 16, 2014·538 cites·20 claims
- 0699US8716765B2Contact structure of semiconductor deviceWU CHENG-HSIEN·Filed 2012·Granted May 6, 2014·387 cites·20 claims
- 0799US8183134B2Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfacesWU CHENG-HSIEN·Filed 2011·Granted May 22, 2012·186 cites·18 claims
- 0898US11404322B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0998US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
- 1098US8742509B2Apparatus and method for FinFETsLEE YI-JING·Filed 2012·Granted Jun 3, 2014·188 cites·13 claims
- 1198US8618556B2FinFET design and method of fabricating sameWU CHENG-HSIEN·Filed 2011·Granted Dec 31, 2013·205 cites·18 claims
- 1298US8609518B2Re-growing source/drain regions from un-relaxed silicon layerWANN CLEMENT HSINGJEN·Filed 2011·Granted Dec 17, 2013·178 cites·13 claims
- 1398US8497528B2Method for fabricating a strained structureLEE TSUNG-LIN·Filed 2010·Granted Jul 30, 2013·241 cites·19 claims
- 1498US8486770B1Method of forming CMOS FinFET deviceWU CHENG-HSIEN·Filed 2011·Granted Jul 16, 2013·42 cites·20 claims
- 1598US7442967B2Strained channel complementary field-effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 28, 2008·91 cites·7 claims
- 1698US7112495B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 26, 2006·270 cites·71 claims
- 1797US11861282B2Integrated circuit fin structure manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 1897US8962400B2In-situ doping of arsenic for source and drain epitaxyTSAI JI-YIN·Filed 2011·Granted Feb 24, 2015·536 cites·21 claims
- 1997US8841701B2FinFET device having a channel defined in a diamond-like shape semiconductor structureLIN YOU-RU·Filed 2011·Granted Sep 23, 2014·530 cites·20 claims
- 2097US8815712B2Method for epitaxial re-growth of semiconductor regionWAN CHENG-TIEN·Filed 2012·Granted Aug 26, 2014·477 cites·20 claims
- 2197US8786019B2CMOS FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 22, 2014·31 cites·20 claims
- 2297US8785285B2Semiconductor devices and methods of manufacture thereofTSAI JI-YIN·Filed 2012·Granted Jul 22, 2014·1.6k cites·20 claims
- 2397US7238564B2Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·64 cites·10 claims
- 2497US7052964B2Strained channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 30, 2006·48 cites·46 claims
- 2596US11972982B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 2696US9564529B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·10 cites·20 claims
- 2796US9287138B2FinFET low resistivity contact formation methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·24 cites·20 claims
- 2896US6882025B2Strained-channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 19, 2005·111 cites·66 claims
- 2995US10804163B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·9 cites·20 claims
- 3095US9985131B2Source/drain profile for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·11 cites·20 claims
- 3195US9780174B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 3, 2017·10 cites·20 claims
- 3295US9159824B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 3395US9147594B2Method for fabricating a strained structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·13 cites·20 claims
- 3495US8629478B2Fin structure for high mobility multiple-gate transistorKO CHIH-HSIN·Filed 2010·Granted Jan 14, 2014·22 cites·21 claims
- 3594US7355262B2Diffusion topography engineering for high performance CMOS fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 8, 2008·34 cites·16 claims
- 3693US9595614B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 14, 2017·6 cites·20 claims
- 3793US9196709B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·14 cites·19 claims
- 3893US8994002B2FinFET having superlattice stressorLEE YI-JING·Filed 2012·Granted Mar 31, 2015·15 cites·20 claims
- 3993US8969156B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·8 cites·20 claims
- 4093US7466008B2BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 16, 2008·35 cites·20 claims
- 4193US7190036B2Transistor mobility improvement by adjusting stress in shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 13, 2007·68 cites·29 claims
- 4293US7101742B2Strained channel complementary field-effect transistors and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 5, 2006·59 cites·71 claims
- 4392US11508627B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
- 4492US10269649B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
- 4592US10096710B2Method of forming strained structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 4692US9502539B2FINFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·7 cites·20 claims
- 4792US8674341B2High-mobility multiple-gate transistor with improved on-to-off current ratioKO CHIH-HSIN·Filed 2009·Granted Mar 18, 2014·16 cites·20 claims
- 4891US10084069B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·4 cites·20 claims
- 4991US9087902B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 21, 2015·8 cites·20 claims
- 5091US8609517B2MOCVD for growing III-V compound semiconductors on silicon substratesWANN CLEMENT HSINGJEN·Filed 2010·Granted Dec 17, 2013·10 cites·14 claims
Showing the top 50 of 218 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →