Inventor · disambiguated record
Chung-Chi Ko
Also filed as: KO CHUNG-CHI
119 granted patents·18 pending applications·1,356 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD92TAIWAN SEMICONDUCTOR MFG29KO CHUNG-CHI6SHIH PO-CHENG2CHANG HUI-LIN1
Top patents by PatentIndex Score
137 records- 0198US11282749B2Forming nitrogen-containing low-k gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
- 0298US10163691B2Low-K dielectric interconnect systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·36 cites·20 claims
- 0398US9754818B2Via patterning using multiple photo multiple etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·472 cites·20 claims
- 0498US6602779B1Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 5, 2003·225 cites·15 claims
- 0597US11742201B2Method of filling gaps with carbon and nitrogen doped filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
- 0697US9754822B1Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·30 cites·20 claims
- 0797US9659811B1Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·19 cites·20 claims
- 0896US9679804B1Multi-patterning to form vias with straight profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·19 cites·20 claims
- 0996US9412648B1Via patterning using multiple photo multiple etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 9, 2016·13 cites·20 claims
- 1096US8361900B2Barrier layer for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·36 cites·23 claims
- 1195US11929281B2Reducing oxidation by etching sacrificial and protection layer separatelyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 1295US11894464B2Fin field-effect transistor device with composite liner for the FinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 1395US11393711B2Silicon oxide layer for oxidation resistance and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 19, 2022·8 cites·20 claims
- 1495US11069812B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·9 cites·20 claims
- 1595US11024550B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·12 cites·20 claims
- 1695US6812043B2Method for forming a carbon doped oxide low-k insulating layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 2, 2004·82 cites·26 claims
- 1794US11929329B2Damascene process using cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 12, 2024·3 cites·20 claims
- 1894US11322412B2Forming nitrogen-containing low-K gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 3, 2022·2 cites·20 claims
- 1993US10692773B2Forming nitrogen-containing low-K gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·5 cites·20 claims
- 2093US10510852B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 2193US9842804B2Methods for reducing dual damascene distortionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 12, 2017·7 cites·20 claims
- 2292US10971589B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 2392US6962869B1SiOCH low k surface protection layer formation by CxHy gas plasma treatmentTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 8, 2005·77 cites·26 claims
- 2491US8470708B2Double patterning strategy for contact hole and trench in photolithographySHIH PO-CHENG·Filed 2010·Granted Jun 25, 2013·16 cites·20 claims
- 2591US7312531B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 25, 2007·22 cites·32 claims
- 2689US10516036B1Spacer structure with high plasma resistance for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·3 cites·20 claims
- 2789US10304677B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·5 cites·20 claims
- 2889US9460997B2Interconnect structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 4, 2016·7 cites·20 claims
- 2988US10269627B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 3088US9768061B1Low-k dielectric interconnect systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·4 cites·20 claims
- 3188US6756321B2Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constantTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·49 cites·19 claims
- 3287US11901219B2Methods of forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 3387US11244823B2Varying temperature anneal for film and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 8, 2022·3 cites·20 claims
- 3487US10840134B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 3587US2025299947A1Methods of forming dielectric layers through deposition and anneal processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3686US11211243B2Method of filling gaps with carbon and nitrogen doped filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 3786US10340178B2Via patterning using multiple photo multiple etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·2 cites·20 claims
- 3886US8536064B2Double patterning strategy for contact hole and trench in photolithographyKO CHUNG-CHI·Filed 2010·Granted Sep 17, 2013·7 cites·18 claims
- 3985US2025329582A1Reducing oxidation by etching sacrificial and protection layer separatelyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4084US12368044B2Methods of forming dielectric layers through deposition and anneal processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 4184US11355339B2Forming nitrogen-containing layers as oxidation blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 7, 2022·2 cites·20 claims
- 4283US12255241B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 4383US12255138B2Interconnect structures of semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 4483US9640428B2Self-aligned repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 2, 2017·3 cites·20 claims
- 4583US8158521B2Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical propertiesCHANG HUI-LIN·Filed 2007·Granted Apr 17, 2012·9 cites·23 claims
- 4683US7968451B2Method for forming self-assembled mono-layer liner for Cu/porous low-k interconnectionsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 28, 2011·8 cites·21 claims
- 4783US7723226B2Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratioTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 25, 2010·11 cites·19 claims
- 4882US10163688B2Interconnect structure with kinked profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 25, 2018·6 cites·20 claims
- 4981US12176206B2Varying temperature anneal for film and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 5081US9514928B2Selective repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·4 cites·19 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →