Inventor · disambiguated record
Chung-Ting Ko
Also filed as: KO CHUNG-TING
65 granted patents·44 pending applications·106 citations·filing 2010–2025
98Inventor score
Top patents by PatentIndex Score
109 records- 0198US11437277B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·19 claims
- 0298US9852947B1Forming sidewall spacers using isotropic etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·28 cites·20 claims
- 0397US11362003B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
- 0497US11271083B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·6 cites·20 claims
- 0597US10177038B1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·17 cites·20 claims
- 0696US12112942B2Deposition process for forming semiconductor device and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·2 cites·20 claims
- 0796US12027423B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0895US12087834B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·2 cites·20 claims
- 0995US11888049B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 1095US11728173B2Masking layer with post treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·3 cites·20 claims
- 1194US11830736B2Multi-layer photo etching mask including organic and inorganic materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·2 cites·21 claims
- 1294US10825737B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·7 cites·20 claims
- 1393US12113113B2Semiconductor device with a core-shell feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·2 cites·20 claims
- 1493US11855185B2Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·16 claims
- 1593US11837505B2Formation of hybrid isolation regions through recess and re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 1692US10943818B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
- 1790US2025359114A1Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1886US10157997B2FinFETs and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 1986US2024363429A1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2086US2025349542A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US12324185B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 2284US2025311265A1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2383US12349381B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 2483US2024387729A1Method of modulating stress of dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2583US2025267890A1Semiconductor device, finfet device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2683US2024395907A1Multilayer masking layer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2782US12501690B2Hardmask formation with hybrid materials in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 2882US12112988B2Hybrid isolation regions having upper and lower portions with seamsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·18 claims
- 2982US2024363707A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3081US12272553B2Multi-layer photo etching mask including organic and inorganic materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3181US12094784B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 3281US11530479B2Atomic layer deposition tool and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·2 cites·20 claims
- 3381US11145746B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
- 3481US10483168B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 3581US2025359265A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3681US2025359132A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3780US12414353B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 3880US2024363432A1Hybrid isolation regions having upper and lower portions with seamsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3979US12125911B2Method of modulating stress of dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 4079US2024363349A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4179US2025359248A1Sti protection layer formation through implantation and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4279US2024387285A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4378US12062578B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 4478US11600530B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 7, 2023·2 cites·20 claims
- 4578US2025331252A1Treating the dielectric films under the bottoms of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4678US2025344428A1Selective bottom seed layer formation for bottom-up epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4778US2025338610A1Semiconductor Structure And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4878US2024304496A1Forming Isolation Regions for Separating Fins and Gate StacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4978US2025359205A1Isolation Structure For TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5077US12237393B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →