Inventor · disambiguated record
Christopher Boguslaw Kocon
Also filed as: KOCON CHRISTOPHER · KOCON CHRISTOPHER B · KOCON CHRISTOPHER BOGUSLAW
113 granted patents·21 pending applications·3,413 citations·filing 1997–2025
99Inventor score
Files withFAIRCHILD SEMICONDUCTOR51TEXAS INSTRUMENTS INC49KOCON CHRISTOPHER BOGUSLAW11CHALLA ASHOK3HARRIS CORP3
Top patents by PatentIndex Score
134 records- 0198US9299830B1Multiple shielding trench gate fetTEXAS INSTRUMENTS INC·Filed 2015·Granted Mar 29, 2016·30 cites·20 claims
- 0298US7982265B2Trenched shield gate power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Jul 19, 2011·81 cites·23 claims
- 0398US7652326B2Power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jan 26, 2010·51 cites·11 claims
- 0498US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0598US7345342B2Power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Mar 18, 2008·402 cites·18 claims
- 0698US7319256B1Shielded gate trench FET with the shield and gate electrodes being connected togetherFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jan 15, 2008·105 cites·19 claims
- 0798US6677641B2Semiconductor structure with improved smaller forward voltage loss and higher blocking capabilityFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jan 13, 2004·240 cites·26 claims
- 0898US6376878B1MOS-gated devices with alternating zones of conductivityFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Apr 23, 2002·186 cites·12 claims
- 0998US6198127B1MOS-gated power device having extended trench and doping zone and process for forming sameINTERSIL CORP·Filed 1999·Granted Mar 6, 2001·230 cites·14 claims
- 1097US8143124B2Methods of making power semiconductor devices with thick bottom oxide layerCHALLA ASHOK·Filed 2008·Granted Mar 27, 2012·148 cites·6 claims
- 1197US7368777B2Accumulation device with charge balance structure and method of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted May 6, 2008·49 cites·6 claims
- 1297US6188105B1High density MOS-gated power device and process for forming sameINTERSIL CORP·Filed 1999·Granted Feb 13, 2001·228 cites·34 claims
- 1396US9368587B2Accumulation-mode field effect transistor with improved current capabilityFAIRCHILD SEMICONDUCTOR·Filed 2014·Granted Jun 14, 2016·12 cites·16 claims
- 1496US8803207B2Shielded gate field effect transistorsGREBS THOMAS E·Filed 2011·Granted Aug 12, 2014·26 cites·20 claims
- 1596US8748976B1Dual RESURF trench field plate in vertical MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·48 cites·19 claims
- 1696US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 1796US7859047B2Shielded gate trench FET with the shield and gate electrodes connected together in non-active regionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Dec 28, 2010·34 cites·5 claims
- 1896US7768064B2Structure and method for improving shielded gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Aug 3, 2010·33 cites·28 claims
- 1996US7473603B2Method for forming a shielded gate trench FET with the shield and gate electrodes being connected togetherFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Jan 6, 2009·37 cites·10 claims
- 2096US6870220B2Method and apparatus for improved MOS gating to reduce miller capacitance and switching lossesFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Mar 22, 2005·108 cites·22 claims
- 2195US9136381B1Super junction MOSFET with integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2014·Granted Sep 15, 2015·21 cites·18 claims
- 2295US8350317B2Power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Jan 8, 2013·17 cites·14 claims
- 2395US8129245B2Methods of manufacturing power semiconductor devices with shield and gate contactsYEDINAK JOSEPH A·Filed 2011·Granted Mar 6, 2012·12 cites·11 claims
- 2495US7745846B2LDMOS integrated Schottky diodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2008·Granted Jun 29, 2010·39 cites·23 claims
- 2595US7589378B2Power LDMOS transistorTEXAS INSTR LEHIGH VALLEY INC·Filed 2007·Granted Sep 15, 2009·53 cites·28 claims
- 2695US7582519B2Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junctionFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Sep 1, 2009·31 cites·27 claims
- 2795US7566931B2Monolithically-integrated buck converterFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jul 28, 2009·37 cites·21 claims
- 2895US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 2995US6433385B1MOS-gated power device having segmented trench and extended doping zone and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Aug 13, 2002·119 cites·17 claims
- 3094US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 3194US6351009B1MOS-gated device having a buried gate and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 1999·Granted Feb 26, 2002·87 cites·18 claims
- 3293US8143123B2Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devicesGREBS THOMAS E·Filed 2008·Granted Mar 27, 2012·15 cites·19 claims
- 3393US8013387B2Power semiconductor devices with shield and gate contacts and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 6, 2011·12 cites·13 claims
- 3493US6717230B2Lateral device with improved conductivity and blocking controlFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Apr 6, 2004·52 cites·24 claims
- 3593US6673681B2Process for forming MOS-gated power device having segmented trench and extended doping zoneFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jan 6, 2004·79 cites·13 claims
- 3692US8680611B2Field effect transistor and schottky diode structuresKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Mar 25, 2014·9 cites·25 claims
- 3792US7595542B2Periphery design for charge balance power devicesFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Sep 29, 2009·31 cites·14 claims
- 3892US7473976B2Lateral power transistor with self-biasing electrodesFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jan 6, 2009·18 cites·22 claims
- 3992US7452777B2Self-aligned trench MOSFET structure and method of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 18, 2008·19 cites·22 claims
- 4091US7132712B2Trench structure having one or more diodes embedded therein adjacent a PN junctionFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 7, 2006·53 cites·41 claims
- 4190US8936985B2Methods related to power semiconductor devices with thick bottom oxide layersCHALLA ASHOK·Filed 2012·Granted Jan 20, 2015·6 cites·12 claims
- 4290US7005353B2Method for improved MOS gating to reduce miller capacitance and switching lossesFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Feb 28, 2006·16 cites·22 claims
- 4390US6818947B2Buried gate-field termination structureFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 16, 2004·63 cites·10 claims
- 4489US9905638B1Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trenchTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 27, 2018·6 cites·20 claims
- 4589US9318598B2Trench MOSFET having reduced gate chargeTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 19, 2016·9 cites·8 claims
- 4688US8928075B2Power integrated circuit including series-connected source substrate and drain substrate power MOSFETsKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Jan 6, 2015·9 cites·13 claims
- 4788US6991977B2Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capabilityFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Jan 31, 2006·31 cites·9 claims
- 4888US6638826B2Power MOS device with buried gateFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Oct 28, 2003·43 cites·17 claims
- 4987US11557673B2Hybrid semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2020·Granted Jan 17, 2023·1 cites·20 claims
- 5087US8692324B2Semiconductor devices having charge balanced structureKOREC JACEK·Filed 2008·Granted Apr 8, 2014·14 cites·24 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →