Inventor · disambiguated record
Chien-I Kuo
Also filed as: KUO CHIEN-I
45 granted patents·21 pending applications·199 citations·filing 2005–2025
97Inventor score
Top patents by PatentIndex Score
66 records- 0197US9831116B2FETS and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·23 cites·20 claims
- 0296US11948999B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0395US12080759B2Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 0495US10453943B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·11 cites·20 claims
- 0595US8169002B2High electron mobility transistor and method for fabricating the sameCHANG EDWARD YI·Filed 2010·Granted May 1, 2012·100 cites·20 claims
- 0694US11728208B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0793US12349426B2Source/drain device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·1 cites·20 claims
- 0892US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
- 0992US10510762B2Source and drain formation technique for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·9 cites·20 claims
- 1092US10103249B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·7 cites·20 claims
- 1191US11004724B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 1291US10522656B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·6 cites·20 claims
- 1390US10510607B1Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1490US9905641B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims
- 1589US2025324639A1Fets and methods of forming fetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1687US2025359197A1Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1786US12471311B2Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1886US11990511B2Source/drain device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·1 cites·20 claims
- 1986US2025006549A1FETS and Methods of Forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2086US2025351483A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2185US11205713B2FinFET having a non-faceted top surface portion for a source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 21, 2021·2 cites·20 claims
- 2285US10854602B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
- 2384US2025374663A1Source/Drain Regions of Semiconductor Devices and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2483US12402344B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2582US10468482B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 2682US2025366109A1Epitaxial structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2781US12389671B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 2880US12439651B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 2980US2025287661A1Source/Drain Device and Method of Forming ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3079US11600715B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 7, 2023·1 cites·20 claims
- 3178US2024371930A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3276US12513948B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 3376US2025311306A1Epitaxial features in semiconductor devices and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3475US2024379781A1Backside Source/Drain Contacts and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3575US2025344427A1Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3674US11804487B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 3774US9171920B2Gate structureUNIV NAT CHIAO TUNG·Filed 2014·Granted Oct 27, 2015·4 cites·2 claims
- 3872US11430878B2Method for fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 3972US2025081557A1Epitaxial structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4071US2025126836A1Source/drain structure dopant cluster designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4170US11688793B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 4270US2024194788A1Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4369US11296080B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 4468US12402354B2Epitaxial features in semiconductor devices and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 4567US10177143B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·1 cites·18 claims
- 4665US11127637B2Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·19 claims
- 4764US11495674B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 8, 2022·0 cites·20 claims
- 4864US11004745B2Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 4964US10991795B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 5062US10749013B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·20 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chien-I Kuo files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →