Inventor · disambiguated record
Charles C. Kuo
Also filed as: KUO CHARLES · KUO CHARLES C · KUO CHARLES C Y
111 granted patents·17 pending applications·907 citations·filing 1980–2024
99Inventor score
Top patents by PatentIndex Score
128 records- 0198US9472748B2Balancing energy barrier between states in perpendicular magnetic tunnel junctionsINTEL CORP·Filed 2016·Granted Oct 18, 2016·77 cites·20 claims
- 0297US8890119B2Vertical nanowire transistor with axially engineered semiconductor and gate metallizationDOYLE BRIAN S·Filed 2012·Granted Nov 18, 2014·31 cites·18 claims
- 0397US7534625B2Phase change memory with damascene memory elementKARPOV ILYA V·Filed 2006·Granted May 19, 2009·86 cites·9 claims
- 0495US10439134B2Techniques for forming non-planar resistive memory cellsINTEL CORP·Filed 2014·Granted Oct 8, 2019·12 cites·21 claims
- 0595US9306063B2Vertical transistor devices for embedded memory and logic technologiesDOYLE BRIAN S·Filed 2013·Granted Apr 5, 2016·20 cites·19 claims
- 0695US8796797B2Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form sameDOYLE BRIAN S·Filed 2012·Granted Aug 5, 2014·17 cites·30 claims
- 0795US7135696B2Phase change memory with damascene memory elementINTEL CORP·Filed 2004·Granted Nov 14, 2006·67 cites·27 claims
- 0893US7864567B2Programming a normally single phase chalcogenide material for use as a memory of FPLAOVONYX INC·Filed 2008·Granted Jan 4, 2011·25 cites·29 claims
- 0992US9882121B2Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layerINTEL CORP·Filed 2014·Granted Jan 30, 2018·7 cites·22 claims
- 1092US9293560B2Vertical nanowire transistor with axially engineered semiconductor and gate metallizationINTEL CORP·Filed 2014·Granted Mar 22, 2016·8 cites·8 claims
- 1192US8786040B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameDOYLE BRIAN S·Filed 2012·Granted Jul 22, 2014·12 cites·28 claims
- 1292US8513576B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2010·Granted Aug 20, 2013·13 cites·17 claims
- 1392US7455571B1Window polishing padROHM & HAAS ELECT MAT·Filed 2007·Granted Nov 25, 2008·35 cites·10 claims
- 1491US9825095B2Hybrid phase field effect transistorINTEL CORP·Filed 2016·Granted Nov 21, 2017·6 cites·24 claims
- 1590US9455343B2Hybrid phase field effect transistorINTEL CORP·Filed 2013·Granted Sep 27, 2016·9 cites·13 claims
- 1690US8952299B2Dual resistance heater for phase change devices and manufacturing method thereofMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 10, 2015·5 cites·22 claims
- 1790US7414883B2Programming a normally single phase chalcogenide material for use as a memory or FPLAINTEL CORP·Filed 2006·Granted Aug 19, 2008·19 cites·32 claims
- 1890US4670181AProcess for pelletization of powder materials and products therefromGOODRICH CO B F·Filed 1985·Granted Jun 2, 1987·59 cites·12 claims
- 1989US7880123B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2005·Granted Feb 1, 2011·14 cites·8 claims
- 2087US9166150B2Electric field enhanced spin transfer torque memory (STTM) deviceDOYLE BRIAN S·Filed 2012·Granted Oct 20, 2015·9 cites·24 claims
- 2187US7910904B2Multi-level phase change memoryOVONYX INC·Filed 2005·Granted Mar 22, 2011·16 cites·8 claims
- 2286US9735348B2High stability spintronic memoryINTEL CORP·Filed 2015·Granted Aug 15, 2017·2 cites·19 claims
- 2386US7374996B2Structured, electrically-formed floating gate for flash memoriesKUO CHARLES·Filed 2005·Granted May 20, 2008·12 cites·10 claims
- 2485US9054302B2Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form sameDOYLE BRIAN S·Filed 2014·Granted Jun 9, 2015·6 cites·5 claims
- 2585US7655938B2Phase change memory with U-shaped chalcogenide cellKUO CHARLES C·Filed 2005·Granted Feb 2, 2010·14 cites·14 claims
- 2684US9871117B2Vertical transistor devices for embedded memory and logic technologiesINTEL CORP·Filed 2016·Granted Jan 16, 2018·3 cites·18 claims
- 2784US8187946B2Manufacturing a phase change memory device having a ring heaterKARPOV ILYA V·Filed 2010·Granted May 29, 2012·8 cites·12 claims
- 2884US7709822B2Phase change memory and manufacturing method thereofSTMICROELETRONICS S R L·Filed 2007·Granted May 4, 2010·12 cites·30 claims
- 2983US10158065B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2014·Granted Dec 18, 2018·6 cites·24 claims
- 3082US11386951B2Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domainsINTEL CORP·Filed 2018·Granted Jul 12, 2022·2 cites·18 claims
- 3182US9812574B2Techniques and configurations for stacking transistors of an integrated circuit deviceINTEL CORP·Filed 2015·Granted Nov 7, 2017·5 cites·15 claims
- 3282US9437808B2Electric field enhanced spin transfer torque memory (STTM) deviceINTEL CORP·Filed 2015·Granted Sep 6, 2016·5 cites·17 claims
- 3381US11227644B2Self-aligned spin orbit torque (SOT) memory devices and their methods of fabricationINTEL CORP·Filed 2018·Granted Jan 18, 2022·5 cites·19 claims
- 3481US10832847B2Low stray field magnetic memoryINTEL CORP·Filed 2015·Granted Nov 10, 2020·2 cites·25 claims
- 3580US9496486B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameINTEL CORP·Filed 2015·Granted Nov 15, 2016·4 cites·18 claims
- 3680US9236476B2Techniques and configuration for stacking transistors of an integrated circuit devicePILLARISETTY RAVI·Filed 2011·Granted Jan 12, 2016·6 cites·11 claims
- 3780US9231194B2High stability spintronic memoryINTEL CORP·Filed 2013·Granted Jan 5, 2016·3 cites·20 claims
- 3880US7764477B2Electrostatic discharge protection circuit including ovonic threshold switchesOVONYX INC·Filed 2008·Granted Jul 27, 2010·8 cites·23 claims
- 3980US7710771B2Method and apparatus for capacitorless double-gate storageUNIV CALIFORNIA·Filed 2007·Granted May 4, 2010·8 cites·9 claims
- 4079US10832749B2Perpendicular magnetic memory with symmetric fixed layersINTEL CORP·Filed 2015·Granted Nov 10, 2020·5 cites·25 claims
- 4179US9224461B2Low voltage embedded memory having cationic-based conductive oxide elementKARPOV ELIJAH V·Filed 2012·Granted Dec 29, 2015·5 cites·11 claims
- 4278US9455011B2Methods and systems to read a magnetic tunnel junction (MTJ) based memory cell based on a pulsed read currentRAYCHOWDHURY ARIJIT·Filed 2012·Granted Sep 27, 2016·6 cites·20 claims
- 4377US11462678B2Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the sameINTEL CORP·Filed 2018·Granted Oct 4, 2022·2 cites·17 claims
- 4477US9779794B2Techniques for forming spin-transfer torque memory (STTM) elements having annular contactsINTEL CORP·Filed 2014·Granted Oct 3, 2017·5 cites·25 claims
- 4577US4720418APre-reacted resistor paint, and resistors made therefromCTS CORP·Filed 1985·Granted Jan 19, 1988·31 cites·13 claims
- 4676US10541014B2Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the sameDOYLE BRIAN S·Filed 2015·Granted Jan 21, 2020·4 cites·21 claims
- 4772US11522060B2Epitaxial layers on contact electrodes for thin- film transistorsINTEL CORP·Filed 2018·Granted Dec 6, 2022·1 cites·24 claims
- 4872US10580973B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 4972US7847333B2Structured, electrically-formed floating gate for flash memoriesKUO CHARLES·Filed 2008·Granted Dec 7, 2010·4 cites·10 claims
- 5072US2025133822A1Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2024·Application pending·0 cites
Showing the top 50 of 128 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →